Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Taras A. Kirichenko"'
Publikováno v:
Physica B: Condensed Matter. :144-147
We propose new structural configurations and novel diffusion mechanisms for neutral di-arsenic interstitial (As2I2) in silicon with a first-principle density functional theory simulation within the generalized gradient approximation. With an assumpti
Publikováno v:
Journal of Applied Physics. 96:5543-5547
We investigate B diffusion in strained Si by using first-principles density functional theory calculations. An enhancement and an anisotropy of B diffusion in biaxial tensile strained Si are found. The diffusion barrier along the strain plane (channe
Autor:
Scott A. Harrison, Gyeong S. Hwang, Thomas F. Edgar, Sanjay K. Banerjee, Decai Yu, Taras A. Kirichenko
Publikováno v:
Journal of Applied Physics. 96:3334-3338
Using plane-wave pseudopotential density functional theory calculations, we have investigated the behaviors of neutral interstitials and vacancies at the amorphous-crystalline (a–c)Si interface. A continuous random network model is employed in the
Publikováno v:
Surface Science. 555:187-192
Based on first principles quantum mechanics (DFT/GGA with pseudopotentials) calculations, we propose a new mechanism for monovacancy annihilation and single missing dimer creation. Our study shows that an isolated monovacancy can exist fairly stable,
Autor:
E. Graetz, M. Shevelev, Sanjay K. Banerjee, P. Kohli, Taras A. Kirichenko, Swaroop Ganguly, Hong Jyh Li
Publikováno v:
Journal of Electronic Materials. 31:214-219
We propose a new method for activation of source/drain junctions by microwave annealing. A study with B/BF2 implants at ultralow energies (300/500 eV) and high doses (1E15/5E15 cm−2) was completed. The samples were subjected to a high-power cyclotr
Autor:
Taras A. Kirichenko, Raghu Srinivasa, Hong Jyh Li, Sanjay K. Banerjee, Swaroop Ganguly, Vikas Agarwal, Li Lin, P. Kohli
Publikováno v:
Journal of Applied Physics. 91:2023-2027
We present a comparative study of BCl2+ and BBr2+, and the traditionally used BF2+, as implant species for the formation of ultrashallow P+-N junctions. From “as-implanted” profiles, a large reduction in channeling tail has been observed for the
Publikováno v:
IEEE Electron Device Letters. 24:221-223
The out-diffusion of indium (In) from In-implanted silicon (Si) samples that includes bare Si, samples with an oxide-cap layer, nitride-cap layer, and nitride/oxide/Si sandwiched samples, is investigated. The dose loss of In with respect to different
Autor:
P. Kohli, Robin Tichy, Peter Zeitzoff, Sanjay K. Banerjee, E. Graetz, Taras A. Kirichenko, H.-J. Li
Publikováno v:
IEEE Electron Device Letters. 23:646-648
Experimental results of germanium (Ge) and indium (In) preamorphization by ion-implantation show that the diffusion of boron (B) is retarded by the presence of Ge or In and that this retardation is more important than the preamorphization (dechanneli
Autor:
Sanjay K. Banerjee, Peter Zeitzoff, Hong Jyh Li, Taras A. Kirichenko, P. Kohli, Swaroop Ganguly
Publikováno v:
Applied Physics Letters. 77:2683-2685
We model B diffusion in the category of equilibrium diffusivity in the presence of other species using ab initio calculations. The result shows that in the presence of other atoms X (X=F, N, C, Al, Ga, In, and Ge), the migration energy for B along th
Publikováno v:
Physical Review B. 80