Zobrazeno 1 - 10 of 65 pro vyhledávání: '"Tara Prasanna Dash"'
1
Modified brain storming optimization technique for transient stability improvement of SVC controller for a two machine system
Autor: Tara Prasanna Dash, Subhashree Choudhury
Publikováno v: World Journal of Engineering. 18:841-850
Purpose Static VAR compensators (SVC) have been recognized to be one of the most important flexible AC transmission systems devices used for mitigating the low-frequency electrochemical oscillations occurring in the system and for reactive power comp
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::21a8cf1fd17c6833408a55129cac7cca
https://doi.org/10.1108/wje-09-2020-0409
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2
Design study of gate-all-around vertically stacked nanosheet FETs for sub-7nm nodes
Autor: J. Jena, E. Mohapatra, C. K. Maiti, Tara Prasanna Dash, Sanghamitra Das
Publikováno v: SN Applied Sciences, Vol 3, Iss 5, Pp 1-13 (2021)
Vertically stacked horizontal nanosheet gate-all-around transistors seem to be one of the viable solutions toward scaling down below sub-7nm technology nodes. In this work, we compare electrical performance, including variability studies of several h
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f43ad0456c2075c3837998dbd95c2f2c
https://doaj.org/article/66453b516d4546acadafa6a88beec25d
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3
Source/Drain Stressor Design for Advanced Devices at 7 nm Technology Node
Autor: E. Mahapatra, S. N. Das, Tara Prasanna Dash, C. K. Maiti, S. Dey, J. Jena
Publikováno v: Nanoscience & Nanotechnology-Asia. 10:447-456
Background:: In nano and microelectronics, device performance enhancement is limited by downscaling. Introduction of intentional mechanical stress is a potential mobility booster to overcome these limitations. This paper explores the key design chall
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee8ca2e63da3b23933acedfe9ec5bc85
https://doi.org/10.2174/2210681209666190809101307
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5
A novel control approach based on hybrid Fuzzy Logic and Seeker Optimization for optimal energy management between micro-sources and supercapacitor in an islanded Microgrid
Autor: Pritam Bhowmik, Subhashree Choudhury, Tara Prasanna Dash, Pravat Kumar Rout
Publikováno v: Journal of King Saud University - Engineering Sciences. 32:27-41
This work presents a novel control technique for proportional power sharing among parallel VSCs connected to an islanded Microgrid in a distributed generation system consisting of Photovoltaic (PV) and Solid Oxide Fuel Cell (SOFC) as two micro-source
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c6ea431cc0b9eba563609cc780d9548
https://doi.org/10.1016/j.jksues.2018.03.006
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7
Multilevel Inverter: A Survey on Classical and Advanced Topologies, Control Schemes, Applications to Power System and Future Prospects
Autor: Mohit Bajaj, Tara Prasanna Dash, Subhashree Choudhury, Salah Kamel, Francisco Jurado
Publikováno v: Energies, Vol 14, Iss 5773, p 5773 (2021)
In recent years, multilevel inverters (MLIs) have emerged to be the most empowered power transformation technology for numerous operations such as renewable energy resources (RERs), flexible AC transmission systems (FACTS), electric motor drives, etc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::be10a346220e13f99583a70ecef0bf3a
https://www.mdpi.com/1996-1073/14/18/5773
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8
Fin Shape Dependence of Electrostatics and Variability in FinFETs
Autor: J. Jena, S. Dey, Tara Prasanna Dash, C. K. Maiti, E. Mohapatra, Suratna Das
Publikováno v: Journal of Electronic Materials. 48:6742-6752
The performance of advanced nanoscale devices is limited by different process variability issues, including patterning proximity effects. Most manufactured fin-shaped field-effect transistors (FinFETs) have some imperfections in the fin shape due to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79e6e0e27f6c1272865897559a9a566a
https://doi.org/10.1007/s11664-019-07480-4
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9
Stress-Induced Variability Studies in Tri-Gate FinFETs with Source/Drain Stressor at 7 nm Technology Nodes
Autor: S. N. Das, Tara Prasanna Dash, C. K. Maiti, E. Mohapatra, J. Jena, S. Dey
Publikováno v: Journal of Electronic Materials. 48:5348-5362
The epitaxially grown SiGe source/drain stressor (e-SiGe) technique has emerged to be a consistent performance booster for advanced devices below the 14 nm technology node. At nanoscale, the omnipresent residual stress is now becoming an important so
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::db34b440478b4238735252f9325d0993
https://doi.org/10.1007/s11664-019-07348-7
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10
A Simulation Study of 2-D Electron Gas in GaN HEMT for High- Speed Applications
Autor: Devika Jena, Farida A. Ali, Tara Prasanna Dash, E. Mohapatra
Publikováno v: 2021 Devices for Integrated Circuit (DevIC).
The high-power GaN High Electron Mobility Transistors (HEMT) are used for next-generation high-speed R.F. applications. This work intends to simulate and analyze the AlxGa1-xN/GaN HEMT to obtain two-dimensional electron gas (2DEG). The variation of 2
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ccd3638ae366b252fcfff848fa89a276
https://doi.org/10.1109/devic50843.2021.9455878
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