On the origin of amplitude reduction mechanism in tapping mode atomic force microscopy

Autor: Hamed Sadeghian, Aliasghar Keyvani, Fred van Keulen, Hans Goosen

Publikováno v: Applied Physics Letters, 112(16):163104. American Institute of Physics
Applied Physics Letters, 16, 112
Applied Physics Letters, 112(16)

The origin of amplitude reduction in Tapping Mode Atomic Force Microscopy (TM-AFM) is typically attributed to the shift in resonance frequency of the cantilever due to the nonlinear tip-sample interactions. In this paper, we present a different insig

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https://research.tue.nl/nl/publications/8bbd063a-f18d-4583-a343-1968198a697c

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Chaos: the speed limiting phenomenon in dynamic atomic force microscopy

This paper investigates the closed-loop dynamics of the Tapping Mode Atomic Force Microscopy using a new mathematical model based on the averaging method in Cartesian coordinates. Experimental and numerical observations show that the emergence of cha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dris___00893::d860ebd49f8ce0c44593fbf43b6ce673
http://resolver.tudelft.nl/uuid:50acfa1f-4b50-411c-b1c6-1fa43b3cc558

Analysis of cross-sections of Ditylum brightwellii biosilica by Tapping Mode Atomic Force Microscopy

Publikováno v: Journal of Scanning Probe Microscopy. 3:19-24

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dris___01423::45c6a4f2106f79ae7b0a6263c388bc79
https://research.rug.nl/en/publications/4fa88db9-41b9-48f2-be44-8ab5bac7b7fe

Temperature dependent structural evolution of graphene layers on 4H-SiC(0001)

Autor: Sonde, S.a b, Vecchio, C.a b, Giannazzo, F.a, Bongiorno, C.a, Di Franco, S.a, Rambach, M.c, Rimini, E.a d, Raineri, V.a

Publikováno v: Materials science forum 679-680 (2011): 797–800. doi:10.4028/www.scientific.net/MSF.679-680.797
info:cnr-pdr/source/autori:Sonde, S.a b and Vecchio, C.a b and Giannazzo, F.a and Bongiorno, C.a and Di Franco, S.a and Rambach, M.c and Rimini, E.a d and Raineri, V.a/titolo:Temperature dependent structural evolution of graphene layers on 4H-SiC(0001)/doi:10.4028%2Fwww.scientific.net%2FMSF.679-680.797/rivista:Materials science forum/anno:2011/pagina_da:797/pagina_a:800/intervallo_pagine:797–800/volume:679-680

In this study we examined the structural evolution of graphene grown on 8° off-axis 4H-SiC(0001) substrates at temperatures from 1600°C to 1700°C in Ar ambient. Morphological transformation of SiC substrate after annealing was examined by Tapping

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e816b8bea2f555a1cdabf252943f666
http://www.cnr.it/prodotto/i/273146