Zobrazeno 1 - 10
of 250
pro vyhledávání: '"Tapobrata, Som"'
Autor:
Rupam Mandal, Aparajita Mandal, Alapan Dutta, Rengasamy Sivakumar, Sanjeev Kumar Srivastava, Tapobrata Som
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 350-359 (2024)
In this work, various physicochemical properties are investigated in nanostructured WOx thin films prepared by radio-frequency magnetron sputtering for optoelectronic applications. A glancing angle of 87° is employed to grow films of different thick
Externí odkaz:
https://doaj.org/article/3fe4851a26e546ca998dabd65a9f9fdd
Autor:
Neeti Keswani, Ricardo J. C. Lopes, Yoshikata Nakajima, Ranveer Singh, Neha Chauhan, Tapobrata Som, D. Sakthi Kumar, Afranio R. Pereira, Pintu Das
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract Magnetic analogue of an isolated free electric charge, i.e., a magnet with a single north or south pole, is a long sought-after particle which remains elusive so far. In magnetically frustrated pyrochlore solids, a classical analogue of mono
Externí odkaz:
https://doaj.org/article/747ca22ec28e4473aea49cf64c6a28bd
Autor:
Ranveer Singh, Maxime Vallet, Vijay Singh, Sanjeev K. Srivastava, Alain Claverie, Tapobrata Som
Publikováno v:
Surface and Interface Analysis. 55:151-161
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33b5eee3a08f86f1530ae725ef19e48
https://doi.org/10.1002/sia.7172
https://doi.org/10.1002/sia.7172
Autor:
R. C. Meena, Asokan Kandasami, Anuradha Bhogra, Devarani Devi, Anha Masarrat, A. Niazi, Sinduja M, Dilruba Hasina, S. Amirthapandian, Tapobrata Som
Publikováno v:
Journal of Materials Science: Materials in Electronics. 32:27801-27814
The structural and electrical transport properties of Ge ion-implanted CoSb3 thin films were investigated. These thin films were deposited by pulsed laser deposition on the quartz substrates and 100 keV Ge ions were implanted with the ion fluences ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc01e58dc7083b59d191ddcdfb751fe
https://doi.org/10.1007/s10854-021-07163-z
https://doi.org/10.1007/s10854-021-07163-z
Autor:
Dilruba Hasina, Anirban Mitra, Ranveer Singh, Mohit Kumar, Sanjeev Kumar Srivastava, Tapobrata Som, Safiul Alam Mollick, Minh Anh Luong
Publikováno v:
ACS Applied Electronic Materials. 3:3804-3814
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65c5e157bfbbae513a9ad16938ca32e9
https://doi.org/10.1021/acsaelm.1c00417
https://doi.org/10.1021/acsaelm.1c00417
Autor:
D.P. Datta, Tapobrata Som
Publikováno v:
Solar Energy. 223:367-375
Designing materials surfaces for reducing the reflection of light is imperative towards enhancing the performance of optical and optoelectronic devices. We show that ion implantation under specific experimental conditions is a single step and control
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81cace609b27c7ba58d5e0d0816845bf
https://doi.org/10.1016/j.solener.2021.05.016
https://doi.org/10.1016/j.solener.2021.05.016
Publikováno v:
Solar Energy. 221:185-196
We report on metal-assisted chemical etching (MaCE) of single crystalline p-Ge(1 0 0) substrates at an elevated temperature, using dilute H2O2 solution, for various etching times in the range of 30–1200 s. We carry out atomic force microscopic and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8162b38bb1587688afc03ca57c2cbc68
https://doi.org/10.1016/j.solener.2021.04.028
https://doi.org/10.1016/j.solener.2021.04.028
Autor:
Mohit Kumar, Tapobrata Som, Floyd D. McDaniel, Wickramaarachchige J. Lakshantha, Bibhudutta Rout
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 488:64-69
Nano-crystalline graphite (NCG) structures on insulating layers have been grown via implantation of kilo-electron-volt (keV) energetic carbon clusters (Cn) on sapphire (Al2O3) and post-implantation thermal annealing conditions. The clusters were prod
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7711270cd211a7bd61af96b9ed605aea
https://doi.org/10.1016/j.nimb.2020.12.005
https://doi.org/10.1016/j.nimb.2020.12.005
Publikováno v:
Solar Energy. 215:1-11
The performance of photovoltaic devices is hindered by the presence of barrier height at the interfaces as well as the presence of structural defects. CdTe solar cells, based on a CdS/CdTe heterojunction and CdCl2 vapour treatment, exhibit high effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa96e5244554b4b197d2756f404c447f
https://doi.org/10.1016/j.solener.2020.12.021
https://doi.org/10.1016/j.solener.2020.12.021
Autor:
Nilanjan Basu, Alapan Dutta, Ranveer Singh, Md. Bayazeed, Avanish S Parmar, Tapobrata Som, Jayeeta Lahiri
Publikováno v:
Applied Physics A. 128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb856ba951c4fc5877aa992cad872848
https://doi.org/10.1007/s00339-022-05536-7
https://doi.org/10.1007/s00339-022-05536-7