Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Tao Cheng Lu"'
Autor:
Yao-Wen Chang, Guan-Wei Wu, I-Chen Yang, Yu-Hung Huang, Ya-Jui Lee, Chih-Hsiung Lee, Kuan-Fu Chen, Tao-Cheng Lu, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
IEEE Electron Device Letters. 43:2077-2080
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f53a3f7e345bd73c70c25e979d0fb1ab
https://doi.org/10.1109/led.2022.3212444
https://doi.org/10.1109/led.2022.3212444
Autor:
Tahui Wang, S. H. Ku, Wen-Jer Tsai, Chun-Yuan Lu, G. W. Wu, Kuang-Chao Chen, C. C. Cheng, Tao-Cheng Lu, You-Liang Chou, Wen Chang, Chih-Yuan Lu
Publikováno v:
IEEE Transactions on Electron Devices. 68:2260-2264
The threshold voltage ( ${V}$ th) distributions of ground-select-line (GSL) cells and edge dummy (DMY0) cells in a 3-D NAND flash memory are investigated. We characterize the ${V}$ th distributions in 3-D NAND flash samples with different fabrication
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ccd15d91ec04dea4d97690b3bf9b713
https://doi.org/10.1109/ted.2021.3063215
https://doi.org/10.1109/ted.2021.3063215
Autor:
Kuang-Chao Chen, Ting-Chien Zhan, Chih-Yuan Lu, Wen-Jer Tsai, Tao-Cheng Lu, Yu-Heng Liu, Tahui Wang
Publikováno v:
IEEE Transactions on Electron Devices. 66:5155-5161
We investigate electron and hole lateral migration in ${V}_{t}$ retention loss in a multilevel charge trap flash memory. We use hot electron program and band-to-band tunneling hot hole erase to inject various amounts of electrons and holes at the two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed02028d1af8b1699637d56802cf0bdb
https://doi.org/10.1109/ted.2019.2949251
https://doi.org/10.1109/ted.2019.2949251
Autor:
Tao-Cheng Lu, Wei-Chun Chen, Yu-Heng Liu, Wen-Jer Tsai, Tahui Wang, Cheng-Min Jiang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
IEEE Electron Device Letters. 38:48-51
We investigated electric field-induced trapped electron lateral migration in a SONOS flash cell. The threshold voltage shift ( $\Delta \text{V}_{t}$ ) and gate-induced drain leakage (GIDL) current were measured to monitor nitride electron movement in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f868dcbdcdc83acd2841a3bfc738d652
https://doi.org/10.1109/led.2016.2633545
https://doi.org/10.1109/led.2016.2633545
Publikováno v:
Perinatology. 32:27
Various conditions can lead to antenatal hepatosplenomegaly. In addition to commonly known etiologies like hydrops fetalis or viral illnesses, hematologic disorders like congenital leukemia, although rare, should also be ruled out. We present a case
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c686a9d1a5a97fac916a34998c3dc42e
https://doi.org/10.14734/pn.2021.32.1.27
https://doi.org/10.14734/pn.2021.32.1.27
Autor:
Ijen-Huang, Tahui Wang, S. H. Ku, C.W. Lee, W. P. Lu, Tao-Cheng Lu, T.W. Lin, C.H. Cheng, Chih-Yuan Lu, Kuang-Chao Chen, Wen-Jer Tsai
Publikováno v:
IRPS
Vt instability caused by random telegraph noise (RTN) in floating gate flash memories beyond 20nm is studied comprehensively. Experiments reveal that the RTN would cause Vt distribution with a kinked tail which re-distributes to a “Gaussian-like”
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::368eaff46b0653afcb1896766606b91b
https://doi.org/10.1109/irps.2018.8353679
https://doi.org/10.1109/irps.2018.8353679
Autor:
Cheng-Min Jiang, Chih-Yuan Lu, Hsiao Yi Lin, Yu-Heng Liu, Wen-Jer Tsai, Kuang-Chao Chen, Tao-Cheng Lu, Tahui Wang
Publikováno v:
IRPS
Data pattern effects on nitride charge lateral migration and V t retention loss in a charge trap flash memory is investigated. We use channel hot electron program and band-to-band tunneling hot hole erase to inject different amounts of electrons and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ab75ffa9661a2214ff51e2e59414beb
https://doi.org/10.1109/irps.2018.8353632
https://doi.org/10.1109/irps.2018.8353632
Autor:
Ping-Hung Tsai, Tzung-Ting Han, S G Yan, Wen-Jer Tsai, Y.R. Chen, Tao-Cheng Lu, C. C. Cheng, Kuang-Chao Chen, Chih-Yuan Lu, C.H. Cheng, Chih-Hsiung Lee, J.S. Huang
Publikováno v:
IEEE Transactions on Electron Devices. 58:1620-1627
A novel low-voltage low-power programming method for NAND Flash cell is presented. By utilizing the self-channel boosting technique, a sufficiently high local field is established in a NAND string that causes efficient hot-carrier injection. This met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd079531c4fe06449bc38734502e4a4
https://doi.org/10.1109/ted.2011.2123898
https://doi.org/10.1109/ted.2011.2123898
Autor:
Tien Fan Ou, C. C. Cheng, Wen-Jer Tsai, Kuang-Chao Chen, C M Yih, T K Chu, Chun-Yuan Lu, Ping Hung Tsai, J.S. Huang, S G Yan, C.H. Cheng, Tao Cheng Lu, Chih-Yuan Lu, C S Hung
Publikováno v:
IEEE Transactions on Electron Devices. 58:945-952
A novel array architecture is proposed for floating-gate nor-type nonvolatile memory cells. By embedding a floating n+ region between two cells in each memory pair, punchthrough (PT) immunity is greatly improved. Since the operating cell and the casc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64385ed837cbffacd2ef4faee00e088d
https://doi.org/10.1109/ted.2011.2104960
https://doi.org/10.1109/ted.2011.2104960
Publikováno v:
IEEE Electron Device Letters. 29:641-644
The shallow trench isolation (STI) stress effect along the length direction on short-channel MOSFET devices has already been widely studied. However, the effect along the width direction has seldom been specifically analyzed. In this paper, we combin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c8be962a8567e842a5f59aaa5c2dc3f
https://doi.org/10.1109/led.2008.922729
https://doi.org/10.1109/led.2008.922729