Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tanya A. Atanasova"'
Autor:
Jerome Daviot, Simone Capecchi, Reiner Willeke, Michael Parthenopoulos, Christian Pizzetti, Tanya A. Atanasova
Publikováno v:
Solid State Phenomena. 255:291-296
This paper demonstrates how a low undercut Ti etchant developed by Technic France can be successfully introduced in a high volume manufacturing Fab for etching the under bump metallization (UBM). The Ti etchant has been tested on 300mm wafer producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0f6de570683edfda4e0fcd0b9f3929d
https://doi.org/10.4028/www.scientific.net/ssp.255.291
https://doi.org/10.4028/www.scientific.net/ssp.255.291
Autor:
Frieder H. Baumann, Jay Mody, Anita Madan, Steven E. Molis, Scott Pozder, Michael Hatzistergos, Pradip Sairam Pichumani, Tanya A. Atanasova
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper discusses the Failure Analysis methodology used to characterize 3D bonded wafers during the different stages of optimization of the bonding process. A combination of different state-of-the-art techniques were employed to characterize the 3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70927e55116a0630b9f202c5bea33fe4
https://doi.org/10.31399/asm.cp.istfa2018p0001
https://doi.org/10.31399/asm.cp.istfa2018p0001
Autor:
Philippe M. Vereecken, L. Carbonell, Rudy Caluwaerts, Zsolt Tokei, Katrien Strubbe, Tanya A. Atanasova
Publikováno v:
ECS Transactions. 41:83-97
The copper interconnect technology is constrained by the significant current distribution due to the terminal effect for resistive thin seeds. As a result, the current in the wafer center can become insufficient for cathodic protection of thin copper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d1335113993a4ea344a1851cded504
https://doi.org/10.1149/1.3699383
https://doi.org/10.1149/1.3699383
Publikováno v:
ECS Transactions. 25:67-78
The acid copper sulfate solutions used for Damascene plating contain several additives which provide the differential kinetics inside cavities for void-free fill. Although the synergetic effects between these additives were studied quite thoroughly f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eeb326b6fc1dc5ff076ab009efb61c6c
https://doi.org/10.1149/1.3335493
https://doi.org/10.1149/1.3335493
Publikováno v:
ECS Meeting Abstracts. :2039-2039
The acid cupric sulfate solutions, used for Damascene copper plating, contain several additives which provide the differential deposition rate inside cavities for void-free fill. Most of the models for this process, available in the literature, can s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59770d24acdcd4a4afbf125dac1f0256
https://doi.org/10.1149/ma2010-02/34/2039
https://doi.org/10.1149/ma2010-02/34/2039
Publikováno v:
ECS Meeting Abstracts. :2708-2708
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d732f8ba7cf36096be6f580a1e4dd8e
https://doi.org/10.1149/ma2009-02/35/2708
https://doi.org/10.1149/ma2009-02/35/2708
Autor:
Marc Meuris, Roger Loo, Valentina Terzieva, Tanya A. Atanasova, Matty Caymax, Wilfried Vandervorst, Laurent Souriau, Alain Moussa
Publikováno v:
Journal of The Electrochemical Society. 155:H677
Defect etching is a fast and simple technique for the revelation of defects in single-crystalline materials. We propose here three different chemistries that allow accurate monitoring of the density of threading dislocations in germanium. This work e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23f6c82c57ed86505159e9c7c5744669
https://doi.org/10.1149/1.2953495
https://doi.org/10.1149/1.2953495