Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Tanner A. Nakagawara"'
Autor:
Dilhara Liyanage, Drew Z. Spera, Rajib Sarkar, Brendan P. Troesch, Tanner A. Nakagawara, Umit Ozgur, Indika U. Arachchige
Publikováno v:
Advanced Photonics Research, Vol 3, Iss 3, Pp n/a-n/a (2022)
Externí odkaz:
https://doaj.org/article/e189cde8d7444aa8b3a61ef3325b4ad6
Publikováno v:
CrystEngComm. 21:1974-1983
Lithium silicates have received noteworthy interest as a class of materials with significant potential in lithium ion batteries, ionic conductors, optical waveguides and sensors, and efficient sorbents for CO2 capture. Herein we report the optical pr
Ge1−xSnx alloy quantum dots with composition-tunable energy gaps and near-infrared photoluminescence
Autor:
Ümit Özgür, Tanner A. Nakagawara, Denis Demchenko, Indika U. Arachchige, Venkatesham Tallapally
Publikováno v:
Nanoscale. 10:20296-20305
Low-cost, less-toxic, and abundantly-produced Ge1−xSnx alloys are an interesting class of narrow energy-gap semiconductors that received noteworthy interest in optical technologies. Incorporation of α-Sn into Ge results in an indirect-to-direct ba
Autor:
Venkatesham, Tallapally, Tanner A, Nakagawara, Denis O, Demchenko, Ümit, Özgür, Indika U, Arachchige
Publikováno v:
Nanoscale. 10(43)
Low-cost, less-toxic, and abundantly-produced Ge1-xSnx alloys are an interesting class of narrow energy-gap semiconductors that received noteworthy interest in optical technologies. Incorporation of α-Sn into Ge results in an indirect-to-direct band
Autor:
Hadis Morkoç, Tanner A. Nakagawara, Mykyta Toporkov, Shopan Hafiz, Vitaliy Avrutin, M. B. Ullah, Ümit Özgür
Publikováno v:
Oxide-based Materials and Devices VII.
Owing to wide range bandgap tunability to more than 5 eV, the quaternary (Be,Mg)ZnO solid solutions are attractive for a variety of UV optoelectronic applications, inclusive of solar blind photodetectors, and intersubband transition devices. The mutu
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 12:1700366
Autor:
Shopan Hafiz, Hadis Morkoç, Ümit Özgür, Ismail Altuntas, M. B. Ullah, Vitaliy Avrutin, Tanner A. Nakagawara
Publikováno v:
Journal of Applied Physics. 121:185704
WOS: 000401364700031
We studied the effect of the substrate temperature, in the range from 450 degrees C to 500 degrees C, on the required Zn to (Be + Mg) flux ratio for plasma-assisted molecular beam epitaxy growth of O-polar BexMgyZn1-x-yO on
We studied the effect of the substrate temperature, in the range from 450 degrees C to 500 degrees C, on the required Zn to (Be + Mg) flux ratio for plasma-assisted molecular beam epitaxy growth of O-polar BexMgyZn1-x-yO on