Zobrazeno 1 - 10
of 264
pro vyhledávání: '"Tanner, Daniel"'
We present a general relation between the electromechanical couplings of infinitesimal strain and electric field to arbitrary order, measured at fixed voltage and at fixed electric field. We show that the improper response at fixed field can be writt
Externí odkaz:
http://arxiv.org/abs/2206.13552
Autor:
Tanner, Daniel S. P., Raha, Sreyan, Doherty, Jessica, Biswas, Subajit, Holmes, Justin D., O'Reilly, Eoin P., Singha, Achintya, Broderick, Christopher A.
Ge$_{1-x}$Sn$_{x}$ alloys are a promising candidate material to realise direct-gap group-IV semiconductors for applications in Si-compatible electronic and photonic devices. Here, we present a combined theoretical and experimental analysis of Raman s
Externí odkaz:
http://arxiv.org/abs/2112.00523
Publikováno v:
Phys. Rev. B 106, L060102, 2022
We investigate the electrostrictive response across a ferroelectric phase transition from first-principles calculations and refute the prevailing view of constant electrostriction across the ferroelectric phase boundary. We take as a case study the e
Externí odkaz:
http://arxiv.org/abs/2111.11352
Autor:
Tanner, Daniel S. P., Broderick, Christopher A., Kirwan, Amy C., Schulz, Stefan, O'Reilly, Eoin P.
Si$_{y}$Ge$_{1-x-y}$(C,Sn,Pb)$_{x}$ alloys have attracted significant attention as a route to achieve a direct-gap group-IV semiconductor. Using density functional theory (DFT) - employing local density approximation and hybrid Heyd-Scuzeria-Ernzerho
Externí odkaz:
http://arxiv.org/abs/2110.11888
In this work we present a new method for the calculation of the electrostrictive properties of materials using density functional theory. The method relies on the thermodynamical equivalence, in a dielectric, of the quadratic mechanical responses (st
Externí odkaz:
http://arxiv.org/abs/2012.03841
Publikováno v:
Phys. Rev. Applied 13, 044068 (2020)
We present a detailed theoretical analysis of the electronic and optical properties of c-plane InGaN/GaN quantum well structures with In contents ranging from 5% to 25%. Special attention is paid to the relevance of alloy induced carrier localization
Externí odkaz:
http://arxiv.org/abs/2001.09345
We present a theoretical analysis of electronic structure evolution in the highly-mismatched dilute carbide group-IV alloy Ge$_{1-x}$C$_{x}$. For ordered alloy supercells, we demonstrate that C incorporation strongly perturbs the conduction band (CB)
Externí odkaz:
http://arxiv.org/abs/1911.06186
Publikováno v:
Phys. Rev. B 100, 094112 (2019)
Using a valence force field model based on that introduced by Martin, we present three related methods through which we analytically determine valence force field parameters. The methods introduced allow easy derivation of valence force field paramet
Externí odkaz:
http://arxiv.org/abs/1908.11245
Autor:
O'Halloran, Edmond J., Broderick, Christopher A., Tanner, Daniel S. P., Schulz, Stefan, O'Reilly, Eoin P.
We present and compare three distinct atomistic models -- based on first principles and semi-empirical approaches -- of the structural and electronic properties of Ge$_{1-x}$Sn$_{x}$ alloys. Density functional theory calculations incorporating Heyd-S
Externí odkaz:
http://arxiv.org/abs/1908.02833