Výsledky vyhledávání - "Tanmay Chavan"

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

Autor: Udayan Ganguly, Tanmay Chavan, Sangya Dutta, Nihar R. Mohapatra

Publikováno v: IEEE Transactions on Electron Devices. 67:2614-2620

The human brain comprises about a hundred billion neurons connected through quadrillion synapses. Spiking neural networks (SNNs) take inspiration from the brain to model complex cognitive and learning tasks. Neuromorphic engineering implements SNNs i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::253f5207df816f698e948e4d257f74fb
https://doi.org/10.1109/ted.2020.2985167

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Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage

Autor: Arnab Pal, Shuo Zhang, Tanmay Chavan, Kunjesh Agashiwala, Chao‐Hui Yeh, Wei Cao, Kaustav Banerjee

Publikováno v: Advanced Materials. :2109894

As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7543581bf927540db63ff7b91acf41d4
https://doi.org/10.1002/adma.202109894

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One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across MoS2 /Metal Interfaces

Autor: Kamyar Parto, Tanmay Chavan, Arnab Pal, Kaustav Banerjee, Kunjesh Agashiwala, Wei Cao, Chao-Hui Yeh

Publikováno v: Physical Review Applied. 15

Low-resistance ohmic contacts are a prerequisite for implementing two-dimensional transition-metal dichalcogenides (2D TMDs) in a host of applications. Edge contacts offer unique advantages, yet their electrical properties are not fully understood. E

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5aa79919110e4b01f49c817e31024c22
https://doi.org/10.1103/physrevapplied.15.064068

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Software-Level Accuracy Using Stochastic Computing With Charge-Trap-Flash Based Weight Matrix

Autor: Shalini Shrivastava, Tanmay Chavan, Udayan Ganguly, Varun Bhatt

Publikováno v: IJCNN

The in-memory computing paradigm with emerging memory devices has been recently shown to be a promising way to accelerate deep learning. Resistive processing unit (RPU) has been proposed to enable the vector-vector outer product in a crossbar array u

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9525e1cc4fa936ef29812df0a38f0b1b

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Dynamics, Design, and Application of a Silicon-on-Insulator Technology Based Neuron

Autor: Shobha Shukla, Sangya Dutta, Vinay B. Y. Kumar, Tanmay Chavan, Nihar R. Mohapatra, Udayan Ganguly, Aditya Shukla

Publikováno v: MRS Advances. 3:3347-3357

Spiking Neural Networks propose to mimic nature’s way of recognizing patterns and making decisions in a fuzzy manner. To develop such networks in hardware, a highly manufacturable technology is required. We have proposed a silicon-based leaky integ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::56aaa4460edb462a78b3d0f8460713f5
https://doi.org/10.1557/adv.2018.490

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An Ultra Energy Efficient Neuron enabled by Tunneling in Sub-threshold Regime on a Highly Manufacturable 32 nm SOI CMOS Technology

Autor: Nihar R. Mohapatra, Tanmay Chavan, Udayan Ganguly, Sangya Dutta

Publikováno v: DRC

Human brain is a seemingly random network of $\sim 10^{11}$ neurons connected by $\sim 10^{14}$ synapses, beating today's best supercomputers by $\sim 10^{6}\times$ in energy efficiency (fig. 1). Hardware realization of such a biological network requ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::da70676821c42696b59d7b4af3f15ecc
https://doi.org/10.1109/drc.2018.8442229

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PCMO RRAM for Integrate-and-Fire Neuron in Spiking Neural Networks

Autor: P. Kumbhare, Udayan Ganguly, Sandip Lashkare, S. Chouhan, Tanmay Chavan, A. Bhat

Publikováno v: IndraStra Global.

Resistance random access memories (RRAM) or memristors with an analog change of conductance are widely explored as an artificial synapse, e.g., Pr0.7Ca0.3MnO3 (PCMO) RRAM-based synapses. In addition to synapses, scaled neurons are essential to enable

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59b45cb8b210de3b8a4f73df20d09f9b
http://dspace.library.iitb.ac.in/xmlui/handle/100/23321

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Electrical Tunability of Partially Depleted Silicon on Insulator (PD-SOI) Neuron

Autor: Tanmay Chavan, Nihar R. Mohapatra, Udayan Ganguly, Sangya Dutta

Publikováno v: Solid-State Electronics. 160:107623

The hardware realization of spiking neural network (SNN) requires a compact and energy efficient electronic analog to the biological neuron. A knob to tune the response of the as-fabricated neuron allows the network to perform various functioning wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0c439a3ae53495bac99e555cbaba870f
https://doi.org/10.1016/j.sse.2019.107623

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