Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Tanka Raj, Rana"'
Autor:
Yasir Siddique, Kyungnan Son, Tanka Raj Rana, Syed Dildar Haider Naqvi, Pham Minh Hoang, Asmat Ullah, Huyen Tran, Sang Min Lee, Sungjun Hong, Seung Kyu Ahn, Inyoung Jeong, SeJin Ahn
Publikováno v:
Energy & Environmental Science. 15:1479-1492
A simple, air processable, DMF molecular ink-based process is presented through which it was able to achieve a new certified record efficiency of 14.4% for the low-gap CuIn(S,Se)2 device.
Publikováno v:
International Journal of Photoenergy, Vol 2021 (2021)
This report demonstrates nontoxic colloidal nitrate route CZTS (Cu2ZnSnS4) synthesis at room temperature, along with their band grading due to incorporation of Ge as cost of Sn (3%). The parent CZTS, CZGTS (Cu2ZnGeSnS4), and their polyvinyl alcohol (
Autor:
KrishnaRao Eswar Neerugatti, Tanka Raj Rana, SeJin Ahn, Soumyadeep Sinha, Pravin S. Pawar, Jaeyeong Heo, Jae Yu Cho
Publikováno v:
ACS Applied Materials & Interfaces. 12:7001-7009
As an alternative buffer material to CdS, ZnxCd1-xS buffer layers for vapor transport-deposited SnS thin-film solar cells (TFSCs) were fabricated using the successive ionic layer adsorption and reaction (SILAR) method. Varying the Zn-to-Cd ratio resu
Autor:
SeJin Ahn, Sang Min Lee, Syed Dildar Haider Naqvi, Yong Soo Cho, Tanka Raj Rana, Shanza Rehan, Dong Gwon Moon, Yasir Siddique, Seung Kyu Ahn
Publikováno v:
ACS Applied Materials & Interfaces. 11:43244-43251
Control of the constituent phase and stoichiometry of iron pyrite (FeS2) is a prerequisite for high-performance photovoltaic devices based on this material. If the pyrite contains sulfur-deficiency-related secondary phases which have a metallic chara
Autor:
Tanka Raj Rana, Jae Ho Yun, Jihye Gwak, Na Kyoung Youn, Young-Joo Eo, Yunae Cho, Jiseon Hwang, Ara Cho, Kihwan Kim, Seung Kyu Ahn, Soomin Song
Publikováno v:
Journal of Materials Chemistry A. 7:11651-11658
The chalcogenide Cu(In,Ga)(S,Se)2 (CIGSSe) solar cell is very promising because it exhibits one of the highest efficiencies among all thin-film solar cells. However, the expensive and complicated fabrication of these solar cells should be overcome fo
Publikováno v:
Current Applied Physics. 18:663-666
Tin sulfide (SnS) film is grown by sputtering process with subsequent post-sulfurization. As-deposited SnS consists of orthorhombic and cubic structure SnS whereas post-sulfurized films showed pure orthorhombic crystal structure. This structural tran
Autor:
Dae-Hwan Kim, Dae-Ho Son, JunHo Kim, SeongYeon Kim, Tanka Raj Rana, Kee Jeong Yang, Jin-Kyu Kang
Publikováno v:
Nano Energy. 45:75-83
We investigated limitation factors of high efficiency Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, where the CZTSSe absorbers were made by using sulfo-selenization process. CZTSSe absorbers with two S/(S+Se) ratios, ~ 0.12 (Se-rich) and ~ 0.22 (S-increased),
Publikováno v:
Current Applied Physics. 18:191-199
We fabricated kesterite Cu2ZnSnSe4 (CZTSe) solar cells and studied device characteristics, where CZTSe absorbers were made by using two-step process. First, we deposited precursor CZTSe films with spin-coating or sputtering, and performed sulfurizati
Publikováno v:
Journal of the Korean Physical Society. 71:1012-1018
We report on physical vapor deposition of indium sulfide (In2S3) buffer layers and its application to Cu(In,Ga)Se2 (CIGSe) thin film solar cell. The Indium sulfide buffer layers were evaporated onto CIGSe at various substrate temperatures from room t
Publikováno v:
Current Applied Physics. 17:1353-1360
Post deposition treatment (PDT) for Cu2ZnSn(S,Se)4 (CZTSSe) was carried out by simply dipping the absorber into the KF solution at 80 °C. The dipping time of absorber in KF solution was found to be crucial to device parameters of CZTSSe solar cell.