Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Tania Paskova"'
Publikováno v:
AIP Advances, Vol 13, Iss 9, Pp 095009-095009-6 (2023)
GaN-based power devices operating at high currents and high voltages are critically affected by the dissipation of Joule heat generated in the active regions. Consequently, knowledge of GaN thermal conductivity is crucial for effective thermal manage
Externí odkaz:
https://doaj.org/article/33d712032bf64cf6b80486fbb2df681a
Autor:
Sara Gleco, Oleksandr Romanyuk, Ivan Gordeev, Karla Kuldová, Tania Paskova, Albena Ivanisevic
Publikováno v:
ACS Omega, Vol 4, Iss 7, Pp 11760-11769 (2019)
Externí odkaz:
https://doaj.org/article/c481fb3e330e48ceae874065c7b91d70
Autor:
W. Taylor Adams IV, Nelson R. Vinueza, Oleksandr Romanyuk, Ivan Gordeev, Tania Paskova, Albena Ivanisevic
Publikováno v:
AIP Advances, Vol 9, Iss 2, Pp 025005-025005-6 (2019)
Water soluble reactive dyes are used to modify nanostructured GaOOH. The resulting particles showed excellent stability in water solutions. The materials were characterized by Scanning electron microscopy (SEM) and X-ray Photoelectron Spectroscopy (X
Externí odkaz:
https://doaj.org/article/faa5952b59a948f19954298453f8c1dd
Autor:
Karla Kuldová, Tania Paskova, Albena Ivanisevic, Ivan Gordeev, Oleksandr Romanyuk, Sara Gleco
Publikováno v:
ACS Omega, Vol 4, Iss 7, Pp 11760-11769 (2019)
The surface properties of biomolecular gradients are widely known to be important for controlling cell dynamics, but there is a lack of platforms for studying them in vitro using inorganic materials. The changes in various surface properties of an Al
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2495e01810469d1e35e692b0423e0aca
https://doaj.org/article/c481fb3e330e48ceae874065c7b91d70
https://doaj.org/article/c481fb3e330e48ceae874065c7b91d70
Autor:
Oleksandr Romanyuk, Tania Paskova, Hailey Davis, Nora G. Berg, Petr Jiricek, Patrick J. Snyder, Albena Ivanisevic, Brady L. Pearce
Publikováno v:
Materials Letters. 236:201-204
Expanding the functionality of electronic materials is often reliant on the attachment of organic molecules to the surface. In this study, several methods for passivating the surface of semipolar (10-1-1) GaN with different chemistries were examined;
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2ab7d1932ee7e6eff2606d333c89aea
https://doi.org/10.1016/j.matlet.2018.10.109
https://doi.org/10.1016/j.matlet.2018.10.109
Autor:
Hengfang Zhang, John F. Muth, Plamen Paskov, Nicholas Blumenschein, Pitsiri Sukkaew, Alyssa Mock, Dat Q. Tran, Vanya Darakchieva, Tania Paskova
Transient thermoreflectance (TTR) technique is employed to study the thermal conductivity of beta-Ga2O3 and high Al-content AlxGa1-xN semiconductors, which are very promising materials for high-power device applications. The experimental data are ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f13d9ac7b3419d1cd1ea7c6c55cd3201
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-163652
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-163652
Publikováno v:
Materials Letters. 189:1-4
High-quality, electronic-grade, aluminum nitride thin films grown by reactive sputtering were studied in vitro. The semiconductor material showed high degree of stability in cell culture with very little Al leaching over time. Unlike other III-nitrid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::baf174f0faa6aa832b9024b0c04e0133
https://doi.org/10.1016/j.matlet.2016.11.041
https://doi.org/10.1016/j.matlet.2016.11.041
Autor:
Kevin Leedy, Taylor Moule, Antonio Crespo, Neil Moser, Andrew J. Green, Elisha J M Mercado, Miles Lindquist, Gregg Jessen, Andreas Popp, James W Pomeroy, Martin Kuball, Nicholas Blumenschein, Nicholas C. Miller, Günter Wagner, Eric R. Heller, Tania Paskova, John F. Muth, Stefano Dalcanale, Kelson D. Chabak, Manikant Singh
Publikováno v:
Blumenschein, N A, Moser, N A, Heller, E R, Miller, N C, Green, A J, Popp, A, Crespo, A, Leedy, K, Lindquist, M, Moule, T, Dalcanale, S, Mercado, E, Singh, M, Pomeroy, J W, Kuball, M, Wagner, G, Paskova, T, Muth, J F, Chabak, K D & Jessen, G H 2019, ' Self-Heating Characterization of β-Ga2O3 Thin-Channel MOSFETs by Pulsed I-V and Raman Nanothermography ', IEEE Transactions on Electron Devices, vol. 67, no. 1, pp. 204-211 . https://doi.org/10.1109/TED.2019.2951502
$\beta $ -Ga2O3 thin-channel MOSFETs were evaluated using both dc and pulsed ${I}$ – ${V}$ measurements. The reported pulsed ${I}$ – ${V}$ technique was used to study self-heating effects in the MOSFET channel. The device was analyzed over a larg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68b55b15111ee50ee9c15d443a087f4e
https://research-information.bris.ac.uk/ws/files/251595172/Self_Heating_Characterization_of_Ga2O3_Thin_Channel_MOSFETs_by_Pulsed_I_V_and_Raman_Nanothermography_2_.pdf
https://research-information.bris.ac.uk/ws/files/251595172/Self_Heating_Characterization_of_Ga2O3_Thin_Channel_MOSFETs_by_Pulsed_I_V_and_Raman_Nanothermography_2_.pdf
Autor:
Rosalia Delgado-Carrascon, Vanya Darakchieva, Tania Paskova, Plamen Paskov, John F. Muth, Muhammad Nawaz, Dat Q. Tran
Publikováno v:
Applied Physics Letters. 118:189901
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::084058455629586b5a5d48c3befd3876
https://doi.org/10.1063/5.0054625
https://doi.org/10.1063/5.0054625
Autor:
Rosalia Delgado-Carrascon, Plamen Paskov, Tania Paskova, Dat Q. Tran, Vanya Darakchieva, Muhammad Nawaz, John F. Muth
Publikováno v:
Applied Physics Letters. 118:109902
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf811a13097a794864f0cf3df739da42
https://doi.org/10.1063/5.0045312
https://doi.org/10.1063/5.0045312