Zobrazeno 1 - 10
of 164
pro vyhledávání: '"Tangsheng Chen"'
Autor:
Xu Jing, Cheng Qian, Xiaodong Zheng, Hu Nian, Chenquan Wang, Jie Tang, Xiaowen Gu, Yuechan Kong, Tangsheng Chen, Yichen Liu, Chong Sheng, Dong Jiang, Bin Niu, Liangliang Lu
Publikováno v:
Chip, Vol 3, Iss 2, Pp 100083- (2024)
Building communication links among multiple users in a scalable and robust way is a key objective in achieving large-scale quantum networks. In a realistic scenario, noise from the coexisting classical light is inevitable and can ultimately disrupt t
Externí odkaz:
https://doaj.org/article/871e3a3c14dd4efd861b17b8b0bdbd51
2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface
Autor:
Bing Qiao, Pengfei Dai, Xinxin Yu, Zhonghui Li, Ran Tao, Jianjun Zhou, Rui Shen, Tangsheng Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 51-55 (2024)
This paper presents high performance hydrogen-terminated diamond MOSFETs fabricated on a (111)-oriented single-crystal diamond substrate. The diamond surface was passivated by a high-quality Al2O3 grown by ALD at 350°C as well as a secondary passiva
Externí odkaz:
https://doaj.org/article/8aae63e2ddb24af2a399362806cd0da3
Autor:
Chengkun Dong, Ziwei Zhou, Xiaowen Gu, Yichen Zhang, Guodong Tong, Zhihai Wu, Hao Zhang, Wenqi Wang, Jun Xia, Jun Wu, Tangsheng Chen, Jinping Guo, Fan Wang, Fengfan Tang
Publikováno v:
Advanced Science, Vol 10, Iss 34, Pp n/a-n/a (2023)
Abstract The integration of metasurfaces and optical waveguides is gradually attracting the attention of researchers because it allows for more efficient manipulation and guidance of light. However, most of the existing studies focus on passive devic
Externí odkaz:
https://doaj.org/article/d53ea3f28883460fa795283613bfc68c
Autor:
Bin Niu, Cheng Qian, Xu Jing, Chenquan Wan, Yuechan Kong, Tangsheng Chen, Yichen Liu, Liangliang Lu
Publikováno v:
Frontiers in Physics, Vol 10 (2023)
Entangled photons are important for testing foundations of quantum physics and are at the heart of quantum technology. Integrated photonics has overwhelming dominance in terms of density and performance, making it a promise route for scalable quantum
Externí odkaz:
https://doaj.org/article/d9b2b3abda9c4a3180b1c7a89aec2f33
Publikováno v:
Results in Physics, Vol 44, Iss , Pp 106137- (2023)
Quantum light source is a promising resource for quantum-enhanced technologies and tests of quantum mechanics. In the race towards scalable quantum information processing, integrated photonics has recently emerged as a powerful platform. Semiconducto
Externí odkaz:
https://doaj.org/article/7360c4ea055548c5b424cf02b77f14b7
Autor:
Xinxin Yu, Wenxiao Hu, Jianjun Zhou, Bin Liu, Tao Tao, Yuechan Kong, Tangsheng Chen, Youdou Zheng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 160-164 (2021)
We have demonstrated a novel method of depositing ALD-Al2O3/PECVD-SiO2 bi-layer dielectric to passive the surface channels of the hydrogen-terminated diamond (H-diamond). After Al2O3/SiO2 passivation, the surface current increased with time and then
Externí odkaz:
https://doaj.org/article/ec7372a040ae4b888b29e23e05afe414
Publikováno v:
Nanotechnology and Precision Engineering, Vol 3, Iss 4, Pp 241-243 (2020)
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types
Externí odkaz:
https://doaj.org/article/321191b2e8f445049d9f48cb2399c314
Autor:
Yu Fu, Ruimin Xu, Jianjun Zhou, Xinxin Yu, Zhang Wen, Yuechan Kong, Tangsheng Chen, Yong Zhang, Bo Yan, Jijun He, Yuehang Xu
Publikováno v:
IEEE Access, Vol 7, Pp 76868-76877 (2019)
A compact large-signal model for hydrogen-terminated (C-H) diamond metal-oxide field effect transistors (MOSFETs) is presented based on an improved quasi-physical zone division (QPZD) model. Unlike the conventional QPZD model for the AlGaN/GaN high-e
Externí odkaz:
https://doaj.org/article/203fa352167646138493ae73059dafa0
Autor:
Wen Wang, Xinxin Yu, Jianjun Zhou, Dunjun Chen, Kai Zhang, Cen Kong, Yuechan Kong, Zhonghui Li, Tangsheng Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 360-364 (2018)
High power performance InAlGaN/GaN high electron mobility transistor (HEMT) as a candidate for high power and high frequency amplifiers has been demonstrated versus the conventional AlGaN/GaN HEMT by using the same device processes. Comparing with it
Externí odkaz:
https://doaj.org/article/233aa39a66844a2a8aa6d57934a7bb4d
Publikováno v:
Micromachines, Vol 11, Iss 1, p 76 (2020)
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high
Externí odkaz:
https://doaj.org/article/b58d10f26a87497da21ad38a020c78fc