Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Tang-Sheng Chen"'
Autor:
Tang-Sheng Chen, 陳堂昇
100
In accompany with the prosperity of internet, government will employ cloud computing to be the application model of reducing operating cost, developing convenience of service and innovation of service. Using the Motor Vehicle & Driver Inform
In accompany with the prosperity of internet, government will employ cloud computing to be the application model of reducing operating cost, developing convenience of service and innovation of service. Using the Motor Vehicle & Driver Inform
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/13740529667100473048
Publikováno v:
Microwave and Optical Technology Letters. 57:2774-2778
An InGaAs/InP three mesa double heterojunction bipolar transistor demonstrating ft/fmax of 350/532 GHz was fabricated on 3 inch wafer with a 0.5 μm emitter and a composite collector. Base resistance Rbb of around 19 Ω was achieved to sustain a rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8e20eb9de544515589c4c904cc25c4a
https://doi.org/10.1002/mop.29433
https://doi.org/10.1002/mop.29433
Publikováno v:
Advanced Materials Research. :948-953
GaN high electronic mobility transistor (HEMT) was fabricated on silicon substrate. A breakdown voltage of 800V was obtained without using field plate technology. The fabrication processes were compatible with the conventional GaN HEMTs fabrication p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48185a4a7b71c2bb40e0fda69539bd05
https://doi.org/10.4028/www.scientific.net/amr.805-806.948
https://doi.org/10.4028/www.scientific.net/amr.805-806.948
Publikováno v:
Applied Mechanics and Materials. :1535-1539
In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045392093973e02a83c91204248527a2
https://doi.org/10.4028/www.scientific.net/amm.347-350.1535
https://doi.org/10.4028/www.scientific.net/amm.347-350.1535
Publikováno v:
Applied Mechanics and Materials. :1621-1624
An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff52985256aa5fa88b3ede7188eb25d
https://doi.org/10.4028/www.scientific.net/amm.347-350.1621
https://doi.org/10.4028/www.scientific.net/amm.347-350.1621
Publikováno v:
2015 IEEE International Conference on Communication Problem-Solving (ICCP).
Passivation of InGaAs/InP double heterostructure bipolar transistors (DHBTs) with room temperature SiNx deposition was investigated. Due to reduction of surface damages during SiNx deposition, current gain improvement was observed at low bias voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2a2dc663fb179abd8297a4329494f68
https://doi.org/10.1109/iccps.2015.7454176
https://doi.org/10.1109/iccps.2015.7454176
Publikováno v:
2010 26th Annual IEEE Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM).
In this paper, the linear relationship of forward Schottky junction voltage of AlGaN/GaN HEMT with temperature was investigated. It was used as temperature sensitive parameter to determine the channel temperature at its normal working state by fast s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb2ffa44e3de879a27c75624c347f1f
https://doi.org/10.1109/stherm.2010.5444296
https://doi.org/10.1109/stherm.2010.5444296
Autor:
Chen Zhenlong, Yulin Wang, Lin Liu, Shilong Jiao, Yutang Ye, Yunfeng Wu, Tang-Sheng Chen, Chao Fan
Publikováno v:
SPIE Proceedings.
An 850 nm monolithically integrated optical receiver front end has been simulated by ATLAS and developed based on 0.5 μm GaAs PHEMT process, which comprises a metal-semiconductor-metal (MSM) photodetector and a distributed amplifier.The output eye d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d13f78e5fedd1f7827081efec2549f2
https://doi.org/10.1117/12.782902
https://doi.org/10.1117/12.782902
Autor:
Tang-Sheng Chen, Chuanhao Li, Xun Dong, Xin-Xin Yu, Zhonghui Li, Lei Pan, Jin-Yu Ni, Daqing Peng
Publikováno v:
Chinese Physics Letters. 32:058103
GaN films with an AlxGa1−xN/AlyGa1−yN superlattice (SL) buffer layer are grown on Si(111) substrates by metal-organic chemical vapor deposition (MOCVD). The structure and strain properties of the samples are studied by optical microscopy, Raman s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ac903756fe52e833d2e005ee1e771a
https://doi.org/10.1088/0256-307x/32/5/058103
https://doi.org/10.1088/0256-307x/32/5/058103
Publikováno v:
2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002..
Design, fabrication and performance of a newly developed novel DC-50 GHz MMIC variable attenuator with multi-function and low inserted phase shift are presented. This attenuator MMIC was fabricated by using Nanjing Electronic Devices Institute (NEDI)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2eb0ae0668dccdcd4a5e9a1bdbf842e
https://doi.org/10.1109/icmmt.2002.1187661
https://doi.org/10.1109/icmmt.2002.1187661