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Autor:
Tang, Daosheng
Understanding the phonon behavior in semiconductors from a topological physics perspective provides more opportunities to uncover extraordinary physics related to phonon transport and electron-phonon interactions. While various kinds of topological p
Externí odkaz:
http://arxiv.org/abs/2404.12557
Autor:
Tang, Daosheng
The topological effects of phonons have been extensively studied in various materials, particularly in the wide-bandgap semiconductor GaN, which has the potential to improve heat dissipation in power electronics due to its intrinsic, topologically-pr
Externí odkaz:
http://arxiv.org/abs/2310.09996
Autor:
Tang, Daosheng, Zhang, Limin
Publikováno v:
2023 Phys. Scr. 98 085934
To effectively regulate thermal transport for the near-junction thermal management of GaN electronics, it is imperative to gain an understanding of the phonon characteristics of GaN nanostructures, particularly the topological phonon properties conne
Externí odkaz:
http://arxiv.org/abs/2302.09781
Publikováno v:
In Microelectronics Reliability January 2024 152
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