Zobrazeno 1 - 10
of 158
pro vyhledávání: '"Taneo Nishino"'
Publikováno v:
Progress of Theoretical Physics Supplement. 57:125-137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::081b8c08efab0bc4b54d3cda23e81572
https://doi.org/10.1143/ptp.57.125
https://doi.org/10.1143/ptp.57.125
Publikováno v:
Applied Surface Science. :380-386
Monte-Carlo master equation (MCME) method has been proposed to simulate the structural evolution of epitaxial growth system in relatively large scale (103–106 atoms). It enables us to describe the structural evolution of epitaxial growth in both si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857766f952eebd6050dcc331ba60b9ad
https://doi.org/10.1016/s0169-4332(00)00139-2
https://doi.org/10.1016/s0169-4332(00)00139-2
Publikováno v:
Applied Surface Science. :89-97
We have studied valence electron-state changes of Si during initial oxidation of Si(111) clean surface, HF-treated Si(001) and Si(111) surfaces by Auger valence electron spectroscopy (AVES). The results showed that the valence electron-state changes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3e48dcde7e0840af41b4a0a0d98f59e
https://doi.org/10.1016/s0169-4332(00)00148-3
https://doi.org/10.1016/s0169-4332(00)00148-3
Publikováno v:
Applied Surface Science. :503-507
Initial stages of self-assembled growth of InAs dots on GaAs(001) and a postgrowth evolution of the deposited surface have been investigated by reflectance-difference (RD) spectroscopy and reflection high-energy electron diffraction (RHEED). A signif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2dbfd287198cbc1b013401e64d6d1d
https://doi.org/10.1016/s0169-4332(00)00132-x
https://doi.org/10.1016/s0169-4332(00)00132-x
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 7:891-895
In situ investigation of two-dimensional InAs layer, i.e., wetting layer , during the growth in the Stranski–Krastanov mode has been performed by using reflectance-difference (RD) spectroscopy and reflection high-energy electron diffraction (RHEED)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d1965d979d1082fdd3c6ba0bc59dfd0
https://doi.org/10.1016/s1386-9477(00)00083-7
https://doi.org/10.1016/s1386-9477(00)00083-7
Publikováno v:
Journal of Crystal Growth. 210:137-142
A spectral subtraction method of Auger valence spectra has been applied in order to analyze the changes of the valence electron states in Si : Fe and Si : Co solid solution layers. In the subtracted Auger spectra of Si : Fe solid solution layers for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd529bbdac6ac7c25769855716440663
https://doi.org/10.1016/s0022-0248(99)00667-3
https://doi.org/10.1016/s0022-0248(99)00667-3
Publikováno v:
Physical Review B. 61:1959-1964
Scanning tunneling microscopy of functional subphthalocyanine (SubPc) molecules on Si(111)-$(7\ifmmode\times\else\texttimes\fi{}7)$ demonstrates site-dependent molecular physisorption and dissociative chemical reaction. The threefold symmetry of both
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8d147b1d2302d612f3590e54f75312e
https://doi.org/10.1103/physrevb.61.1959
https://doi.org/10.1103/physrevb.61.1959
Publikováno v:
Journal of Applied Physics. 86:3140-3143
We have studied linear electrooptic effects in long-range ordered (Al0.5Ga0.5)0.5In0.5P on GaAs (115)A and GaAs (001) by polarized electroreflectance spectroscopy. The electroreflectance spectra show anisotropic interference oscillations below the ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3553ee871030a32ab89a17650cbdf9b
https://doi.org/10.1063/1.371179
https://doi.org/10.1063/1.371179
Publikováno v:
Physical Review B. 59:15358-15362
Efficient anti-Stokes photoluminescence (PL) has been observed in ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}$ and GaAs single heterostructure. PL of ${\mathrm{Ga}}_{0.5}{\mathrm{In}}_{0.5}\mathrm{P}$ was observed when photoexciting the ${\math
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92ed984983ba67fe0c205169e6ab54d4
https://doi.org/10.1103/physrevb.59.15358
https://doi.org/10.1103/physrevb.59.15358
Publikováno v:
Applied Surface Science. 142:537-542
Thin films of Si heavily doped with Mn impurities at nonequilibrium doping levels have been successfully prepared by Laser-Ablation MBE. The electronic structure of Mn-doped Si thin films have been investigated by Auger Valence Electron Spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8365e1fbb785e05abe5d57d2b517d68d
https://doi.org/10.1016/s0169-4332(98)00704-1
https://doi.org/10.1016/s0169-4332(98)00704-1