Zobrazeno 1 - 10
of 142
pro vyhledávání: '"Tan, Pingheng"'
Local laser heating effects in diamond probed by photoluminescence of SiV centers at low temperature
Diamond is generally considered to have high thermal conductivity, so little attention has been paid to the laser heating effects at low excitation power. However, defects during the growth process can result in a great degradation of thermal conduct
Externí odkaz:
http://arxiv.org/abs/2306.06972
Autor:
Zhou, Yan, Zhou, Shi, Wan, Shun, Zou, Bo, Feng, Yuxia, Mei, Rui, Wu, Heng, Tan, Pingheng, Shigekawa, Naoteru, Liang, Jianbo, Kuball, Martin
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow GaN on Si without using thick strain relief buffer layers due to their
Externí odkaz:
http://arxiv.org/abs/2302.01525
Autor:
Cheng, Long, Li, Huiping, Lin, Gaoting, Yan, Jian, Zhang, Lei, Yang, Cheng, Tong, Wei, Ren, Zhuang, Zhu, Wang, Cong, Xin, Gao, Jingjing, Tan, Pingheng, Luo, Xuan, sun, Yuping, Zhu, Wenguang, Sheng, Zhigao
Searching multiple types of terahertz (THz) irradiation source is crucial for the THz technology. Here, by utilizing a two-dimensional (2D) ferromagnetic Cr2Ge2Te6 crystal, we firstly demonstrate a magneto-tunable monochromatic THz irradiation source
Externí odkaz:
http://arxiv.org/abs/2104.03132
Autor:
Hao, Song, Yan, Shengnan, Wang, Yang, Xu, Tao, Zhang, Hui, Cong, Xin, Li, Lingfei, Liu, Xiaowei, Cao, Tianjun, Gao, Anyuan, Zhang, Lili, Jia, Lanxin, Long, Mingsheng, Hu, Weida, Wang, Xiaomu, Tan, Pingheng, Sun, Litao, Cui, Xinyi, Liang, Shi-Jun, Miao, Feng
Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires directly o
Externí odkaz:
http://arxiv.org/abs/1912.12459
Autor:
Sun, Tianze, Xu, Zongwei, Wu, Jintong, Fan, Yexin, Ren, Fei, Song, Ying, Yang, Long, Tan, Pingheng
Publikováno v:
In Ceramics International 1 March 2023 49(5):7452-7465
Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning
Autor:
Hao, Song, Zeng, Junwen, Xu, Tao, Cong, Xin, Wang, Chenyu, Wu, Chenchen, Wang, Yaojia, Liu, Xiaowei, Cao, Tianjun, Su, Guangxu, Jia, Lanxin, Wu, Zhangting, Lin, Qian, Zhang, Lili, Yan, Shengnan, Guo, Mengfan, Wang, Zhenlin, Tan, Pingheng, Sun, Litao, Ni, Zhenhua, Liang, Shi-Jun, Cui, Xinyi, Miao, Feng
Publikováno v:
Advanced Functional Materials 2018, 1803746
Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications. However, the synthesis of metallic TMDs is based on gas-phase method
Externí odkaz:
http://arxiv.org/abs/1808.02283
The newly developed two-dimensional layered materials provide perfect platform for valley-spintronics exploration. To determine the prospect of utilizing the valley degree of freedom, it is of great importance to directly detect and understand the va
Externí odkaz:
http://arxiv.org/abs/1507.04599
We have systematically examined the circular polarization of monolayer WSe2 at different temperature, excitation energy and exciton density. The valley depolarization in WSe2 is experimentally confirmed to be governed by the intervalley electron-hole
Externí odkaz:
http://arxiv.org/abs/1502.07088
Autor:
Nan, Haiyan, Wang, Zilu, Wang, Wenhui, Liang, Zheng, Lu, Yan, Chen, Qian, He, Daowei, Tan, Pingheng, Miao, Feng, Wang, Xinran, Wang, Jinlan, Ni, Zhenhua
We report on a strong photoluminescence (PL) enhancement of monolayer MoS2 through defect engineering and oxygen bonding. Micro- PL and Raman images clearly reveal that the PL enhancement occurs at cracks/defects formed during high temperature vacuum
Externí odkaz:
http://arxiv.org/abs/1405.4334
Autor:
Zhang, Rui, Dong, Yunliang, Kong, Wenjie, Han, Wenpeng, Tan, Pingheng, Liao, Zhimin, Wu, Xiaosong, Yu, Dapeng
Publikováno v:
J. Appl. Phys. 112, 104307 (2012)
Growth of epitaxial graphene on the C-face of SiC has been investigated. Using a confinement controlled sublimation (CCS) method, we have achieved well controlled growth and been able to observe propagation of uniform monolayer graphene. Surface patt
Externí odkaz:
http://arxiv.org/abs/1211.6591