Zobrazeno 1 - 10
of 845
pro vyhledávání: '"Tan, H. H."'
Publikováno v:
ACS Nano 15, 7226 (2021)
We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. We use a citric acid based wet etch that enables complex shap
Externí odkaz:
http://arxiv.org/abs/2305.08309
Publikováno v:
Nanoscale 12, 20317-20325 (2020)
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device geometries that d
Externí odkaz:
http://arxiv.org/abs/2010.09883
Autor:
Liu, Z., Papadimitriou, I., Castillo-Rodríguez, M., Wang, C., Esteban-Manzanares, G., Yuan, X., Tan, H. H., Molina-Aldareguía, J. M., LLorca, J.
Publikováno v:
Nano Letters, 19, 4490-4497, 2019
Taper-free InP twinning superlattice (TSL) nanowires with an average twin spacing of ~ 13 nm were grown along the zinc-blende close-packed [111] direction using metalorganic vapor phase epitaxy. The mechanical properties and fracture mechanisms of in
Externí odkaz:
http://arxiv.org/abs/1908.11239
Autor:
Seidl, J., Gluschke, J. G., Yuan, X., Naureen, S., Shahid, N., Tan, H. H., Jagadish, C., Micolich, A. P., Caroff, P.
We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrica
Externí odkaz:
http://arxiv.org/abs/1907.00134
Autor:
Tedeschi, D., De Luca, M., Junior, P. E. Faria, del Águila, A. Granados, Gao, Q., Tan, H. H., Scharf, B., Christianen, P. C. M., Jagadish, C., Fabian, J., Polimeni, A.
Publikováno v:
Phys. Rev. B 99, 161204 (2019)
In this study, we present a complete experimental and theoretical investigation of the fundamental exciton Zeeman splitting in wurtzite InP nanowires. We determined the exciton gyromagnetic factor, $g_{exc}$, by magneto-photoluminescence spectroscopy
Externí odkaz:
http://arxiv.org/abs/1811.04922
We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N$_2$ and O$_2$, and N$_2$ bubbled through liquid H$_2$O and alcohols to identify whether phase-related structural/surf
Externí odkaz:
http://arxiv.org/abs/1706.04826
Autor:
Carrad, D. J., Mostert, A. B., Ullah, A. R., Burke, A. M., Joyce, H. J., Tan, H. H., Jagadish, C., Krogstrup, P., Nygård, J., Meredith, P., Micolich, A. P.
Publikováno v:
Nano Letters 17, 827-833 (2017)
A key task in the emerging field of bioelectronics is the transduction between ionic/protonic and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics and are best s
Externí odkaz:
http://arxiv.org/abs/1705.00611
Autor:
Carrad, D. J., Burke, A. M., Lyttleton, R. W., Joyce, H. J., Tan, H. H., Jagadish, C., Storm, K., Linke, H., Samuelson, L., Micolich, A. P.
Publikováno v:
Nano Letters 14, 94 (2014)
We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain
Externí odkaz:
http://arxiv.org/abs/1404.1975
We compare the electronic characteristics of nanowire field-effect transistors made using single pure wurtzite and pure zincblende InAs nanowires with nominally identical diameter. We compare the transfer characteristics and field-effect mobility ver
Externí odkaz:
http://arxiv.org/abs/1306.4394
Autor:
Burke, A. M., Waddington, D., Carrad, D., Lyttleton, R., Tan, H. H., Reece, P. J., Klochan, O., Hamilton, A. R., Rai, A., Reuter, D., Wieck, A. D., Micolich, A. P.
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We present an extended study conduct
Externí odkaz:
http://arxiv.org/abs/1207.2851