Zobrazeno 1 - 10
of 340
pro vyhledávání: '"Tamotsu Ninomiya"'
Autor:
Kazunori Hasegawa, Kanta Hara, Nobuyuki Shishido, Satoshi Nakano, Wataru Saito, Tamotsu Ninomiya
Publikováno v:
Power Electronic Devices and Components, Vol 7, Iss , Pp 100061- (2024)
This paper presents a power-cycling degradation monitoring method of an IGBT module with a VCE(sat) sensing circuit and junction temperature prediction by a three-dimensional structure model. A chopper circuit was introduced to provide a continuous-c
Externí odkaz:
https://doaj.org/article/3d377ab792d04205acba779def0fb4dc
Publikováno v:
Journal of Engineering, Vol 2018 (2018)
High step-up nonisolated multicellular dc-dc converter has been newly proposed for PV microconverters. The multicellular converter consists of the nonisolated step-up cell converters using bidirectional semiconductor switches, and these cell converte
Externí odkaz:
https://doaj.org/article/f18a8b22114c4bc89469556b4f298a0b
Publikováno v:
Journal of Engineering, Vol 2016 (2016)
An active gate controlled semiconductor protection switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output Parallel) connected multicell dc-dc converter. The SiC-MOSFET with high temperature capabi
Externí odkaz:
https://doaj.org/article/360e335baf464c9ba30fda1452756d85
Autor:
Akinori Hariya, Ken Matsuura, Hiroshige Yanagi, Satoshi Tomioka, Yoichi Ishizuka, Tamotsu Ninomiya
Publikováno v:
Active and Passive Electronic Components, Vol 2016 (2016)
Recently, high power-density, high power-efficiency, and wide regulation range isolated DC-DC converters have been required. This paper presents considerations of physical design and implementation for wide regulation range MHz-level LLC resonant DC-
Externí odkaz:
https://doaj.org/article/b5df9da4c9944b0f97fd759af6d032f1
Autor:
Tamotsu Ninomiya, Yusuke Hayashi
Publikováno v:
IEEJ Journal of Industry Applications. 7:479-487
Publikováno v:
Microelectronics Reliability. :482-485
In this paper, we propose the criteria of bias voltage from parasitic capacitance and demonstrate the criteria in an experiment with the present IGBT. The bias voltage criteria are theoretically predicted for the new generation IGBT based on the scal
Publikováno v:
Microelectronics Reliability. 126:114289
The shoot-through fault in inverters results from a gate noise voltage of power semiconductor switches including IGBTs. Testing the gate voltage under the high-speed switching event is important to evaluate immunity to the fault as well as to analyze
Autor:
Ken Matsuura, Tomoya Koga, Yoichi Ishizuka, Akinori Hariya, Satoshi Tomioka, Hiroshige Yanagi, Tamotsu Ninomiya
Publikováno v:
IEEE Transactions on Power Electronics. 32:5953-5963
This paper presents circuit design techniques for reducing the effects of magnetic flux, occurred from the planar transformer, on gallium nitride high-electron-mobility transistors (GaN-HEMTs) in 5-MHz 100-W high power-density LLC resonant dc–dc co
Publikováno v:
Microelectronics Reliability. :465-469
The shoot-through phenomenon has not been fully discussed for high-power inverters with IGBTs. This is because a negative gate voltage is applied to IGBTs during off states. Recently, attention is paid to an improved gate driver with only a positive
Publikováno v:
IEEJ Journal of Industry Applications. 6:268-277