Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Tamotsu Jikimoto"'
Autor:
Kunikaza Izumi, Isaho Kamata, Toshiyuki Miyanagi, Tomonori Nakamura, Hidekazu Tsuchida, Tamotsu Jikimoto
Publikováno v:
Materials Science Forum. :721-724
We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00a145dc338465632de0aced3c133fac
https://doi.org/10.4028/www.scientific.net/msf.483-485.721
https://doi.org/10.4028/www.scientific.net/msf.483-485.721
Publikováno v:
Materials Science Forum. :573-576
First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been performed. Interface states due to Si-Si bonds appear at the valence band edge. Interface states at the midgap va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98427911a2308c0ff4b7cc8995cfad73
https://doi.org/10.4028/www.scientific.net/msf.483-485.573
https://doi.org/10.4028/www.scientific.net/msf.483-485.573
Publikováno v:
Materials Science Forum. :1297-1300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27fde5cb23cbaec9ab67e0fdcf03335a
https://doi.org/10.4028/www.scientific.net/msf.457-460.1297
https://doi.org/10.4028/www.scientific.net/msf.457-460.1297
Publikováno v:
Materials Science Forum. :131-136
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::941848923b2b1b920f34719c7be08859
https://doi.org/10.4028/www.scientific.net/msf.433-436.131
https://doi.org/10.4028/www.scientific.net/msf.433-436.131
Publikováno v:
Materials Science Forum. :261-264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453c22b40de395fe031296dfd991b176
https://doi.org/10.4028/www.scientific.net/msf.433-436.261
https://doi.org/10.4028/www.scientific.net/msf.433-436.261
Publikováno v:
Defect and Diffusion Forum. :111-116
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c1cc57a56846b3b34a1f15a30b5d61
https://doi.org/10.4028/www.scientific.net/ddf.206-207.111
https://doi.org/10.4028/www.scientific.net/ddf.206-207.111
Autor:
Hiroyuki Fujisawa, Isaho Kamata, A. Ueda, Kunikaza Izumi, Katsunori Ueno, Hidekazu Tsuchida, Takashi Tsuji, Syunsuke Izumi, Tamotsu Jikimoto
Publikováno v:
Materials Science Forum. :1141-1144
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e4d1a99c701d6e85319d54c8183257d
https://doi.org/10.4028/www.scientific.net/msf.389-393.1141
https://doi.org/10.4028/www.scientific.net/msf.389-393.1141
Publikováno v:
Journal of Crystal Growth. :1206-1212
A vertical radiant-heating reactor has been developed for thick silicon carbide (SiC) epitaxial growth, in which the susceptor and substrates are heated by radiation from the hot wall. The benefit of the heating and sample-holding method is demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09b6d6e9fd5d450d3c10d7e875c5c017
https://doi.org/10.1016/s0022-0248(01)02173-x
https://doi.org/10.1016/s0022-0248(01)02173-x
Autor:
Tetsuo Takahashi, Hidekazu Tsuchida, Yasuto Hijikata, M. Midorikawa, Masahito Yoshikawa, Hajime Okumura, Yuuki Ishida, Tamotsu Jikimoto, Sadafumi Yoshida, Yuichi Tomioka
Publikováno v:
Materials Science Forum. :1013-1016
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::785c11daeff29fed8716a51dbd58dd4b
https://doi.org/10.4028/www.scientific.net/msf.389-393.1013
https://doi.org/10.4028/www.scientific.net/msf.389-393.1013
Publikováno v:
Materials Science Forum. :1137-1140
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::584b4f1759ce305ac84e1ca10d2d54a9
https://doi.org/10.4028/www.scientific.net/msf.389-393.1137
https://doi.org/10.4028/www.scientific.net/msf.389-393.1137