Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Tamba Tugbawa"'
Autor:
Ushasree Katakamsetty, Stefan Nikolaev Voykov, Boris Vasilev, Sam Nakagawa, Tamba Tugbawa, Jansen Chee, Aaron Gower-Hall, Brian Lee, Weiyang Zhu, Bifeng Li, Kimiko Ichikawa
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
We present a characterization and modeling methodology for chip-level simulation of pattern dependencies in the fabrication of copper interconnects. The methodology integrates semi-empirical models for copper CMP and copper plating processes, and use
Publikováno v:
MRS Proceedings. 767
In this work, we present an integrated prediction of thickness variations in electroplating and chemical mechanical polishing (CMP) processes across an entire chip for random layouts. We achieve chip-scale prediction by first calibrating both electro
Publikováno v:
MRS Proceedings. 767
Our group has proposed several chip-scale CMP models, with key assumptions including the notion of planarization length in the pattern density model [1], and step height dependent polishing rate in the density step height model [2]. In the effective
Publikováno v:
MRS Proceedings. 671
Wepropose an integratedcontact mechanics and density-step-heightmodel of pattern dependencies for the chemical-mechanical polishing (CMP) of multi-level copper interconnects, and show preliminary comparisons with experimental data for the overburden
Autor:
Tae Park, Gerald Martin, Albert Gonzales, Paul Lefevre, John Nguyen, Tom Brown, Duane S. Boning, Tamba Tugbawa, Michael Gostein
Publikováno v:
MRS Proceedings. 671
Wehaveusedalargepatterntestmaskandaspecificarrangementofstructuresonawaferfor direct measurement of an average planarization length for copper chemical mechanical polishing (CMP)processes.Weproposenewminimum,maximum,andaverageplanarizationlengthdefin
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
Copper electroplated profiles exhibit pattern dependent topography. We propose a methodology for the characterization and modeling of feature scale copper step heights and the height of copper array regions, as a function of layout parameters. The re
Autor:
S. Hymes, Tom Brown, M. Joffe, Tamba Tugbawa, W. Sands, Duane S. Boning, H. Yeung, Tae Park, M. Banet, John Nguyen, K. Smekalin, T. West
Publikováno v:
MRS Proceedings. 566
A planarization monitor has been applied to the copper system to investigate pattern dependencies during copper overburden planarization. Conventional profilometry and a noncontact, acousto-optic measurement tool, the Insite 300, are utilized to quan
Autor:
Dennis Ouma, Tae Park, Charles Oji, Brian Lee, Tamba Tugbawa, Taber H. Smith, Duane S. Boning
Publikováno v:
MRS Proceedings. 566
In previous work, we have formalized the notions of “planarization length” and “planarization response function” as key parameters that characterize a given CMP consumable set and process. Once extracted through experiments using carefully de
Autor:
Chidi Chidambaram, Tae Park, Gregg Shin, Christopher L. Borst, Tamba Tugbawa, Duane S. Boning
Publikováno v:
Journal of The Electrochemical Society. 151:C418
In this paper, a methodology for the characterization and modeling of pattern-dependent problems in copper interconnect topography is presented. For the electroplating process, the methodology consists of test structure and mask design to examine fea