Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Tamba Gbondo-Tugbawa"'
Autor:
Ushasree Katakamsetty, Stefan Voykov, Sascha Bott, Sam Nakagawa, Tamba Gbondo-Tugbawa, Aaron Gower-Hall, Brian Lee, Jansen Chee, Henry Geng, Weiyang Zhu, Bifeng Li, Kimiko Ichikawa
Publikováno v:
DTCO and Computational Patterning.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa0403ec439f4f9c2637c0ee6e7a789e
https://doi.org/10.1117/12.2616078
https://doi.org/10.1117/12.2616078
Autor:
Single Hsu, Brian Lee, Jansen Chee, Tamba Gbondo-Tugbawa, Ethan Wang, Ya-Chieh Lai, Eason Lin, Aaron Gower-Hall
Publikováno v:
Design-Process-Technology Co-optimization for Manufacturability XIV.
As we move to more advanced nodes, the number of Chemical Mechanical Polishing (CMP) steps in semiconductor processing is increasing rapidly. CMP is known to suffer from pattern dependent variation such as dishing, erosion, recess, etc., all of which
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d21447ff09e2988bd3986fd3d34e4ad2
https://doi.org/10.1117/12.2551253
https://doi.org/10.1117/12.2551253
Autor:
Yang-Chih Chiu, Brian Lee, ZhengFang Liu, Tamba Gbondo-Tugbawa, Kuang Han Chen, Hua Ding, JinBing Liu, Aaron Gower-Hall, Flora Li, Helen Li, Chunlei Zhang
Publikováno v:
SPIE Proceedings.
Chemical mechanical polishing (CMP) has been a critical enabling technology in shallow trench isolation (STI), which is used in current integrated circuit fabrication process to accomplish device isolation. Excessive dishing and erosion in STI CMP pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0934e7080a3a24f524fc6c908b883ce
https://doi.org/10.1117/12.2219912
https://doi.org/10.1117/12.2219912
Publikováno v:
SPIE Proceedings.
Traditional RC extraction flows mostly consider interconnect thickness variations caused by etch and CMP processes in a way of rule-based approach where a form of tables or polynomials is used. While such rulebased approaches are easily incorporated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d28347671555860685751e3fd4e20b9e
https://doi.org/10.1117/12.2219118
https://doi.org/10.1117/12.2219118
Autor:
Tamba Gbondo-Tugbawa, Ushasree Katakamsetty, Brian Lee, Kuang-Han Chen, Yongfu Li, Jaime Bravo, Aaron Gower-Hall, Sang Min Han, Jansen Chee, Colin Hui
Publikováno v:
SPIE Proceedings.
As we move to advanced technology nodes, the requirements on within chip and across wafer planarity are becoming more demanding [1]. Also, the number of Chemical Mechanical Polishing (CMP) processes and steps used in microelectronic chip manufacturin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::153c0293f8e0cb85fc2e7965471f09aa
https://doi.org/10.1117/12.2219545
https://doi.org/10.1117/12.2219545
Autor:
JenPin Weng, Toshiaki Yanagisawa, Aaron Gower-Hall, Stephen E. Greco, Tamba Gbondo-Tugbawa, Laertis Economikos, Pavan Y. Bashaboina, Wei-Tsu Tseng
Publikováno v:
ISQED
Multi-step Chemical Mechanical Polishing (CMP) has been used in copper interconnect fabrication for more than a decade. During this time, advances in both the CMP-based damascene manufacturing processes and in the design flows, have enabled significa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d7541019bfb9b4b2e1b39126a01ee74
https://doi.org/10.1109/isqed.2012.6187496
https://doi.org/10.1109/isqed.2012.6187496
Autor:
Seung-Weon Paek, Aaron Gower-Hall, Jinwoo Lee, Kuang Han Chen, Tamba Gbondo-Tugbawa, Naya Ha, Philippe Hurat, Kee Sup Kim
Publikováno v:
SPIE Proceedings.
Traditionally model based CMP check and hotspot detection are only done at the top level of the design because full chip assembly is required to capture CMP long range effect. When manufacturing hotspots are found just before tape out and layout modi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3db15527b2d254a1537b1e7599e4936
https://doi.org/10.1117/12.880899
https://doi.org/10.1117/12.880899
Autor:
Xian Bin Wang, Colin Hui, Subramanian Jayathi, Chi-Min Yuan, Laertis Economikos, Ushasree Katakamsetty, Xiang Hua, Tamba Gbondo-Tugbawa, Vikas Mehrotra, Kuang Han Chen, Song Li, Taber H. Smith, Mohammed Fazil Fayaz, Stephen E. Greco, Haigou Huang
Publikováno v:
SPIE Proceedings.
Chemical Mechanical Polishing (CMP) has been used in the manufacturing process for copper (Cu) damascene process. It is well known that dishing and erosion occur during CMP process, and they strongly depend on metal density and line width. The inhere
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df7eefa136d5fede5b72d4191e8b8e20
https://doi.org/10.1117/12.816556
https://doi.org/10.1117/12.816556