Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Tamara P. Smirnova"'
Autor:
V. N. Demin, V. O. Borisov, Tamara P. Smirnova, G. N. Grachev, M. N. Khomyakov, A. L. Smirnov
Publikováno v:
Journal of Structural Chemistry. 61:1390-1397
Hard silicon carbonitride coatings are prepared using Ar and Ar (10 vol.% He) laser plasma from hexamethyldisilazane (HMDS) [(CH3)3Si]2NH and HMDS+benzene vapors. The coatings are characterized by infrared (IR), Raman, and X-ray photoelectron spectro
Autor:
Tamara P. Smirnova, A. L. Smirnov, M. N. Khomyakov, V. N. Demin, V. O. Borisov, G. N. Grachev
Publikováno v:
Journal of Structural Chemistry. 58:1503-1509
Carbon nitride coatings are synthesized in the new laser plasma of powerful optical pulsating discharge using acetonitrile as a precursor. A high-pressure and -temperature C3N4 cubic phase with a spinel structure type is obtained. The microhardness o
Publikováno v:
Journal of Structural Chemistry. 58:1573-1580
X-ray photoelectron spectroscopy, X-ray diffraction, and high-resolution transmission electron microscopy (over thickness profiling of the elemental and phase compositions of the samples) are used to investigate the elemental and phase compositions,
Autor:
V. Ya. Prinz, E. A. Maksimovsky, I. V. Korol’kov, L. V. Yakovkina, Tamara P. Smirnova, N. D. Volchok, S. V. Mutilin, V. R. Shayapov
Publikováno v:
Journal of Materials Science. 52:4061-4069
High-quality vanadium dioxide (VO2) films were synthesized on sapphire and silicon substrates by metal–organic chemical vapor deposition. Optimal growth conditions for obtaining abrupt and reversible semiconductor–metal phase transition of VO2 we
Autor:
Timofey V. Perevalov, Vladimir A. Gritsenko, E. V. Ivanova, Andrey A. Saraev, V. A. Pustovarov, Tamara P. Smirnova, L. V. Yakovkina, Vasily V. Kaichev, M. V. Zamoryanskaya
Publikováno v:
Materials Chemistry and Physics. 175:200-205
Dielectric films of La2O3, HfO2, and LaxHf1-xOy were synthesized by metal-organic chemical vapor deposition. Structural, chemical, and luminescence properties of the films were studied using X-ray photoelectron spectroscopy, methods of X-ray diffract
Autor:
Tamara P. Smirnova, L. V. Yakovkina, Andrey A. Saraev, Vasily V. Kaichev, V. O. Borisov, V. N. Kichai
Publikováno v:
Inorganic Materials. 50:158-164
The chemical structure, phase composition, and crystal structure of LaxHf1 − xOy films grown on Si using volatile metalorganic compounds as Hf and La precursors have been studied by X-ray diffraction, X-ray photoelectron spectroscopy, energy disper
Publikováno v:
Journal of Crystal Growth. 523:125156
Here we report the results of studying the crystal structure of solid solutions films, obtained in the HfO 2 -Sc 2 O 3 nano-scale system using of ALD process and volatile complex compounds such as of Hf(N(C 2 H 5 ) 2 ) 4 and [Sc(C 5 H 4 CH 3 ). A num
Publikováno v:
Russian Microelectronics. 42:439-447
Processes of chemical vapor deposition (CVD) of metal and dielectric (high-k and low-k) films with the help of unconventional initial reagents (volatile complex and organoelement compounds) were developed. Complex investigation of the chemical and ph
Publikováno v:
Inorganic Materials. 49:172-178
(HfO2)1 − x (Sc2O3) x films have been grown by chemical vapor deposition (CVD) using the volatile complexes hafnium 2,2,6,6-tetramethyl-3,5-heptanedionate (Hf(thd)4) and scandium 2,2,6,6-tetramethyl-3,5-heptanedionate (Sc(thd)3) as precursors. The
Autor:
V. V. Kaichev, L. V. Yakovkina, V. N. Kichai, V. O. Borisov, Tamara P. Smirnova, V. V. Kriventsov
Publikováno v:
Journal of Structural Chemistry. 53:708-714
The chemical composition and structure of HfO2 films and binary oxides formed by their doping with aluminum and scandium are analyzed. It is shown that aluminum doping of HfO2 causes film amorphization: at the Al concentration above 30 at.% the film