Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Tamar Mentzel"'
Publikováno v:
Nano Letters. 11:30-34
We investigate the effect of electrostatic screening on a nanoscale silicon MOSFET electrometer. We find that screening by the lightly doped p-type substrate, on which the MOSFET is fabricated, significantly affects the sensitivity of the device. We
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5526475f801b92b8c21a9e30e665b333
https://doi.org/10.1021/nl102121e
https://doi.org/10.1021/nl102121e
Autor:
Francesco Marsili, Tamar Mentzel, Darcy D. Wanger, David B. Strasfeld, Moungi G. Bawendi, Vitor R. Manfrinato, Hee-Sun Han, Karl K. Berggren, Jose Pablo Arrieta
Publikováno v:
Darcy Wanger
We demonstrated a technique to control the placement of 6 nm-diameter CdSe and 5 nm-diameter CdSe/CdZnS colloidal quantum dots (QDs) through electron-beam lithography. This QD-placement technique resulted in an average of three QDs in each cluster, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9098a479efce5b0083ebb40ff64f60d4
http://hdl.handle.net/1721.1/84485
http://hdl.handle.net/1721.1/84485
Autor:
Brian J. Walker, Moungi G. Bawendi, Darcy D. Wanger, David B. Strasfeld, Tamar Mentzel, Marc Kastner, Nirat Ray
Publikováno v:
Nano letters. 12(8)
We present the first semiconductor nanocrystal films of nanoscale dimensions that are electrically conductive and crack-free. These films make it possible to study the electrical properties intrinsic to the nanocrystals unimpeded by defects such as c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::51024537c4098dc019b410066eeab484
https://pubmed.ncbi.nlm.nih.gov/22784104
https://pubmed.ncbi.nlm.nih.gov/22784104
Publikováno v:
Nano letters. 11(10)
Contact effects are a common impediment to electrical measurements throughout the fields of nanoelectronics, organic electronics, and the emerging field of graphene electronics. We demonstrate a novel method of measuring electrical conductance in a t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26e3b65fe326990d3d945d2eb6b7bc6a
https://pubmed.ncbi.nlm.nih.gov/21899339
https://pubmed.ncbi.nlm.nih.gov/21899339
Autor:
Scott M. Geyer, Jonathan E. Halpert, Tamar Mentzel, Moungi G. Bawendi, Venda J. Porter, Marc Kastner
Publikováno v:
Physical Review B. 82
We report the influence of trap states on charge transport through films of mixed CdTe and CdSe nanocrystals (NCs) between lateral electrodes, through layered films of CdTe and CdSe NCs in a layered geometry, and through films of CdTe/CdSe nanobarbel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e55d6d8c91dec578cec44974719905e
https://doi.org/10.1103/physrevb.82.155201
https://doi.org/10.1103/physrevb.82.155201
Publikováno v:
Nano letters. 10(3)
We measure charge transport in a hydrogenated amorphous silicon (a-Si:H) thin film using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances even in the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4993b71926f31962216ed7d577f2a0e
https://pubmed.ncbi.nlm.nih.gov/20178356
https://pubmed.ncbi.nlm.nih.gov/20178356
Autor:
Marc Kastner, Moungi G. Bawendi, Tamar Mentzel, Kenneth MacLean, Scott M. Geyer, Venda J. Porter
Publikováno v:
Physical Review B. 77
We report electrical transport measurements of arrays of PbSe nanocrystals forming the channels of field-effect transistors. We measure the current in these devices as a function of source-drain voltage, gate voltage, and temperature. Annealing is ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c9a33c9effe15317457a8549157183
https://doi.org/10.1103/physrevb.77.075316
https://doi.org/10.1103/physrevb.77.075316
Publikováno v:
Physical Review B. 73
We measure the conductance of close-packed films of $\mathrm{CdTe}$ nanocrystals in field-effect structures in the dark and in the presence of light. We find that the majority carriers are holes, that they are injected from gold electrodes into the $
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d803c7c024a9f08fd61f37015a70f696
https://doi.org/10.1103/physrevb.73.155303
https://doi.org/10.1103/physrevb.73.155303