Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Tamao, Aoki"'
Autor:
Keita Katayama, Toshiki Kinoshita, Ren Okada, Hiroshi Fukuoka, Takehito Yoshida, Minoru Yaga, Tamao Aoki-Matsumoto, Ikurou Umezu
Publikováno v:
Applied Physics A. 128
Autor:
Akira Higo, Tamao Aoki, Hiroshi Fukuoka, Minoru Yaga, Keita Katayama, Ikurou Umezu, Takehito Yoshida
Publikováno v:
Applied Physics A. 126
Double-pulsed laser ablation with two targets and lasers in a background gas is a method to form nanoparticle complex. Effects of pulse delay between two lasers on plume expansion dynamics are discussed. The germanium and silicon targets were set par
Autor:
Akihisa Fujita, Tamao Aoki-Matsumoto, Yasuhisa Fujita, Hitoshi Mizuno, Koichiro Kitamura, Ichiro Hiromitsu, Shunsuke Nasu
Publikováno v:
Thin Solid Films. 653:136-142
Bilayer films consisting of poly{[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene]vinylene} (MEH-PPV) and 5-(4-Carboxyphenyl)-10,15,20-triphenyl-21H,23H-porphine (H2TPP(COOH)) layers are fabricated by spin-coating method. Excitation energy transfer from
Autor:
Tamao Aoki, Hiroshi Fukuoka, Toshiki Kinoshita, Keita Katayama, Ikurou Umezu, Takehito Yoshida, Yuki Horai
Publikováno v:
Applied Physics A. 124
Effects of head on collision on two laser ablation plumes in background gas are revealed by observation of plume expansion dynamics. Nb2O5 and Ni targets were set parallel to each other and irradiated simultaneously by two YAG lasers in He gas under
Autor:
Ryo Yamada, Muneyuki Naito, Akira Sugimura, Nobuya Machida, Yusuke Koshiba, Tamao Aoki, Ikurou Umezu
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 365:110-113
We have examined microstructures induced by pulsed-laser-melting for the Mn ion implanted Si using transmission electron microscopy. Single crystalline Si(0 0 1) wafers were irradiated with 65 keV and 120 keV Mn ions to a fluence of 1.0 × 10 16 /cm
Autor:
Muneyuki Naito, Akira Sugimura, Yusuke Koshiba, Ikurou Umezu, Daisuke Kawabe, Atsushi Kohno, Tadashi Saitoh, Mitsuru Inada, Tamao Aoki, Katsuki Nagao
Publikováno v:
Applied Physics A. 117:155-159
Hyperdoping with deep-level impurity is a promising method to prepare intermediate band semiconductors. We prepared silicon hyperdoped with deep-level impurities, sulfur and titanium, by ion implantation followed by pulsed YAG laser melting. The proc
Autor:
Ken-ichi Mizuno, Tadashi Itoh, K. Sugahara, Tamao Aoki-Matsumoto, T. Matsubara, Masao Ichida, Hiroaki Ando
Publikováno v:
Journal of Luminescence. 131:506-509
A persistent hole-burning is observed in β-perylene microcrystallites, which were embedded in poly-vinyl alcohol. By laser light excitation at 22,535 cm−1 and at 10 K, the hole is found at the excitation photon energy. The mechanism of the persist
Autor:
Hiroaki Ando, Masao Ichida, Hitoshi Mizuno, Tamao Aoki-Matsumoto, Ken-ichi Mizuno, Takeshi Hirai
Publikováno v:
physica status solidi c. 8:128-131
In fluorene(80%)–anthracene(20%) mixed crystals, mainly observed luminescence is broad D2 bands, which originates from an excitation state localized on two anthracene molecules and is accompanied by lattice relaxation. Under high intensity excitati
Publikováno v:
physica status solidi c. 8:100-103
Optical properties of anthracene molecules in phenanthrene crystals with anthracene concentration of 0.03% to 8.4% were investigated and compared with those in fluorene crystals. In contrast to fluorene system where two kinds of dimers, one of which
Publikováno v:
Journal of Luminescence. 129:1531-1534
Properties of two luminescence centers, which are observed in anthracene-doped fluorene crystal as concentration increases, have been investigated to clarify their origin. Excitation spectra and concentration dependence of absorption spectra were mea