Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Tam, M. C. A."'
Autor:
Harrigan, S. R., Sfigakis, F., Tian, L., Sherlekar, N., Cunard, B., Tam, M. C., Kim, H. -S., Wasilewski, Z., Reimer, M. E., Baugh, J.
We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure that we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming and outgoi
Externí odkaz:
http://arxiv.org/abs/2407.12714
Autor:
Elbaroudy, A., Khromets, B., Sfigakis, F., Bergeron, E., Shi, Y., Tam, M. C. A., Blaikie, T., Nichols, George, Baugh, J., Wasilewski, Z. R.
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, an
Externí odkaz:
http://arxiv.org/abs/2401.15341
This study introduces the Reciprocal Space Polar Visualization (RSPV) method, a novel approach for visualizing X-ray diffraction-based reciprocal space data. RSPV allows for the precise separation of tilt and strain, facilitating their individual ana
Externí odkaz:
http://arxiv.org/abs/2401.13258
Autor:
Buonacorsi, B., Sfigakis, F., Shetty, A., Tam, M. C., Kim, H. S., Harrigan, S. R., Hohls, F., Reimer, M. E., Wasilewski, Z. R., Baugh, J.
Publikováno v:
Applied Physics Letters 119, 114001 (2021)
We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The dopant-free III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combin
Externí odkaz:
http://arxiv.org/abs/2102.13320
Autor:
Shetty, A., Sfigakis, F., Mak, W. Y., Gupta, K. Das, Buonacorsi, B., Tam, M. C., Kim, H. S., Farrer, I., Croxall, A. F., Beere, H. E., Hamilton, A. R., Pepper, M., Austing, D. G., Studenikin, S. A., Sachrajda, A., Reimer, M. E., Wasilewski, Z. R., Ritchie, D. A., Baugh, J.
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs loc
Externí odkaz:
http://arxiv.org/abs/2012.14370
Autor:
Shetty, A., Sfigakis, F., Mak, W. Y., Das Gupta, K., Buonacorsi, B., Tam, M. C., Kim, H. S., Farrer, I., Croxall, A. F., Beere, H. E., Hamilton, A. R., Pepper, M., Austing, D. G., Studenikin, S. A., Sachrajda, A., Reimer, M. E., Wasilewski, Z. R., Ritchie, D. A., Baugh, J.
Publikováno v:
Physical Review B. 105
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::26d1fa27d9a7b6a473c4f0533283ba18
https://doi.org/10.1103/physrevb.105.075302
https://doi.org/10.1103/physrevb.105.075302
Akademický článek
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Akademický článek
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Autor:
Tam, M. C., Vincett, P. S.
Publikováno v:
IEEE Transactions on Industry Applications; 1983, Vol. IA-19 Issue 5, p766-770, 5p
Publikováno v:
IEEE Network; 1991, Vol. 5 Issue 4, p34-41, 8p