Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Talin Ayvazian"'
Publikováno v:
Novel In-Plane Semiconductor Lasers XVII.
High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden
Publikováno v:
High-Power Diode Laser Technology XVI.
High-power single-mode (SM) and multi-mode (MM) InGaAs-AlGaAs strained quantum well (QW) lasers are critical components for both terrestrial and space satellite communications systems. Since these lasers predominantly fail by catastrophic and sudden
Autor:
Talin Ayvazian, Scott D. Sitzman, Jesse Theiss, Zachary Lingley, Brendan Foran, William A. Hubbard, Miles Brodie
Publikováno v:
Applied Physics Letters. 115:133502
We report electronic transport mapping in a single dielectric layer of a polycrystalline BaTiO3 multilayer ceramic capacitor (MLCC) by electron beam induced current (EBIC) measurements using a scanning transmission electron microscope. Ga+ focused io
Publikováno v:
ACS Nano. 7:9469-9479
Electroluminescence (EL) from nanocrystalline CdSe (nc-CdSe) nanowire arrays is reported. The n-type, nc-CdSe nanowires, 400-450 nm in width and 60 nm in thickness, were synthesized using lithographically patterned nanowire electrodeposition, and met
Publikováno v:
Chemistry of Materials. 25:623-631
Electroluminescent (EL) metal-semiconductor-metal nanojunctions are prepared by electrodepositing nanocrystalline cadmium selenide (nc-CdSe) within ∼250 nm gold (Au) nanogaps prepared by focused ion beam milling. The electrodeposition of nc-CdSe is
Autor:
Scott R. Nuccio, Talin Ayvazian, Allyson D. Yarbrough, Rebecca Lin, Megan Campbell, Andrei Dubitsky, John Scarpulla, Jeremy Young, Steven C. Moss, Walter F. Buell, Wayne Martin
Publikováno v:
2016 IEEE Accelerated Stress Testing & Reliability Conference (ASTR).
For every semiconductor device, digital processor, FPGA (field programmable gate array), etc. on a typical electronics board, there are usually a dozen or more associated MLCCs. They perform power supply bypassing, DC isolation, EMI filtering functio
Publikováno v:
ACS Applied Materials & Interfaces. 4:4445-4452
Field-effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrodepositio
Publikováno v:
Chemistry of Materials. 24:2382-2390
We describe the fabrication of arrays of nanowires on glass in which a gold core nanowire is encapsulated within a hemicylindrical shell of manganese dioxide. Arrays of linear gold (Au) nanowires are first prepared on glass using the lithographically
Autor:
Wenbo Yan, Wytze E. van der Veer, Jung Yun Kim, Talin Ayvazian, Sheng-Chin Kung, Reginald M. Penner, Wendong Xing
Publikováno v:
ACS Nano. 6:5627-5634
Nanocrystalline cadmium selenide (nc-CdSe) was electrodeposited within a sub-50 nm gold nanogap, prepared by feedback-controlled electromigration, to form a photoconductive metal-semiconductor-metal nanojunction. Both gap formation and electrodeposit
Autor:
Dmitry Veksler, Gennadi Bersuker, Pragya Rasmi Shrestha, Kin P. Cheung, Talin Ayvazian, Adam Bushmaker
Publikováno v:
ECS Meeting Abstracts. :734-734
Device technologies developed to address specific needs for neuromorphic systems include non-volatile memory (NVM), which can serve as microelectronic "synapses" for low-power mobile computing applications. Desirable memory stack characteristics incl