Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Talib Al-Ameri"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 5, Iss 6, Pp 466-472 (2017)
In this paper, we present a simulation study of vertically stacked lateral nanowires transistors (NWTs), which may have applications at 5-nm CMOS technology. Our simulation approach is based on a collection of simulation techniques to capture the com
Externí odkaz:
https://doaj.org/article/ade92b8b404440ab8a3d081fbe577108
Autor:
Fikru Adamu-Lema, M. Duan, Salim Berrada, Talib Al-Ameri, Vihar P. Georgiev, Asen Asenov, Jaehyun Lee
Publikováno v:
ECS Transactions. 80:33-42
I. Introduction Modeling and simulation of semiconductor devices have been a vital tool in driving the development and comprehensive understanding of the semiconductor physics and devices. In the last 4 decades’ analysis, using state-of-the-art dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7064fbaf8b3f54b836c6120499e89ee6
https://doi.org/10.1149/08004.0033ecst
https://doi.org/10.1149/08004.0033ecst
Autor:
Salvatore Maria Amoroso, Asen Asenov, Fikru Adamu-Lema, Toufik Sadi, Ewan Towie, Vihar P. Georgiev, Xingsheng Wang, Y. Wang, Andrew R. Brown, Talib Al-Ameri
Publikováno v:
Solid-State Electronics. 129:73-80
In this work we investigate the impact of quantum mechanical effects on the device performance of n-type silicon nanowire transistors (NWT) for possible future CMOS applications at the scaling limit. For the purpose of this paper, we created Si NWTs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2d0fc5e5cb298b4946a8ca1fb294a09
https://doi.org/10.1016/j.sse.2016.12.015
https://doi.org/10.1016/j.sse.2016.12.015
Publikováno v:
2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).
In this work we have investigated the impact of quantum mechanical effects on the device performance of n-type in ultra-scaled SixGe1−x nanowire transistors (NWT) for possible future applications. For the purpose of this paper SixGe1−x NWTs with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf4b3ee112c1840690fa622061670df9
https://doi.org/10.1109/ulis.2016.7440096
https://doi.org/10.1109/ulis.2016.7440096
Autor:
Robert Campbell Aitken, Y. Wang, Lucian Shifren, Andrew R. Brown, Salvatore Maria Amoroso, Greg Yeric, Xingsheng Wang, Ewan Towie, Craig Riddet, Jinfeng Kang, Talib Al-Ameri, Xiaoyan Liu, Asen Asenov, Binjie Cheng, Saurabh Sinha, Vihar P. Georgiev, David Reid
In this paper, we have studied the impact of quantum confinement on the performance of n-type silicon nanowire transistors (NWTs) for application in advanced CMOS technologies. The 3-D drift-diffusion simulations based on the density gradient approac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8121893761e03623c9fb488581f5b17c
https://eprints.gla.ac.uk/110788/2/110788.pdf
https://eprints.gla.ac.uk/110788/2/110788.pdf
—This work investigates the impact of quantum\ud mechanical effects on the device performance of n-type silicon\ud nanowire transistors (NWT) for possible future applications. For\ud the purpose of this paper we have simulated Si NWTs with six\ud v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdcd0bef1f97a19e7861342da7bb8e82
https://eprints.gla.ac.uk/110790/1/110790.pdf
https://eprints.gla.ac.uk/110790/1/110790.pdf