Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Talha Chohan"'
Autor:
Talha Chohan, Zhixing Zhao, Steffen Lehmann, Wafa Arfaoui, Germain Bossu, Jens Trommer, Stefan Slesazeck, Thomas Mikolajick, Mahesh Siddabathula
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:387-395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b08387c202e55df06e7fb7af849de0
https://doi.org/10.1109/tdmr.2022.3183630
https://doi.org/10.1109/tdmr.2022.3183630
Autor:
Jing-Hua Hsuen, Maximillian Lederer, Lars Kerkhofs, Yannick Raffel, Luca Pirro, Talha Chohan, Konrad Seidel, Thomas Kämpfe, Sourav De, Tian-Li Wu
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::767a31c0a628bac3012d5e9b0ca77203
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134504
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134504
Autor:
Bhaswar Chakrabarti, Sourav De, Thomas Kaempfe, Konrad Seidel, Tian-Li Wu, Jing-Hua Hsuen, Talha Chohan, Luca Pirro, Maximilian Lederer, Yannick Raffel, Nellie Laleni, Franz Müller, Sunanda Thunder, Masud S K Rana
This letter proposes a memory cell, denoted by 1F-1T, consisting of a ferroelectric field-effect transistor (Fe-FET) cascoded with another current-limiting transistor (T). The transistor reduces the impact of drain current (Id) variations by limiting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cd1ad6fadd173b3862fa2b4a0b2d73d
https://doi.org/10.36227/techrxiv.22178192
https://doi.org/10.36227/techrxiv.22178192
Autor:
Yannick Raffel, Sunanda Thunder, Maximilian Lederer, Ricardo Olivo, Raik Hoffmann, Luca Pirro, Sven Beyer, Talha Chohan, Po-Tsang Huang, Sourav De, Thomas Kampfe, Konrad Seidel, Johannes Heitman
Publikováno v:
2022 International Conference on IC Design and Technology (ICICDT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dd3772da44dd55ea95b631ab72fabe9
https://doi.org/10.1109/icicdt56182.2022.9933119
https://doi.org/10.1109/icicdt56182.2022.9933119
Autor:
Yannick, Raffel, Sourav, De, Maximilian, Lederer, Ricardo Revello, Olivo, Raik, Hoffmann, Sunanda, Thunder, Luca, Pirro, Sven, Beyer, Talha, Chohan, Thomas, Kämpfe, Konrad, Seidel, Johannes, Heitmann
Publikováno v:
ACS applied electronic materials. 4(11)
This article reports an improvement in the performance of the hafnium oxide-based (HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e454d3c730a575c5e6b823bd45c6a5d9
https://pubmed.ncbi.nlm.nih.gov/36439397
https://pubmed.ncbi.nlm.nih.gov/36439397
Autor:
Zhixing Zhao, Steffen Lehmann, Wei Lun Oo, Amit Kumar Sahoo, Shafi Syed, Quang Huy Le, Dang Khoa Huynh, Talha Chohan, Dirk Utess, Dominik Kleimaier, Maciej Wiatr, Sabine Kolodinski, Jerome Mazurier, Jan Hoentschel, Andreas Knorr, Ned Cahoon, Stefan Kneitz
Publikováno v:
2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bef3e5c3d875db0c12f48ec8f64e10b
https://doi.org/10.1109/bcicts50416.2021.9682480
https://doi.org/10.1109/bcicts50416.2021.9682480
Publikováno v:
2021 IEEE International Integrated Reliability Workshop (IIRW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::582a87c90b83629965dd9d47bd8acb2f
https://doi.org/10.1109/iirw53245.2021.9635622
https://doi.org/10.1109/iirw53245.2021.9635622
Autor:
Stefan Slesazeck, Thomas Mikolajick, Jens Trommer, Talha Chohan, Steffen Lehmann, Gernot Krause
Publikováno v:
2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Among various device degradation modes, bias temperature instability (BTI) is one of the key reliability concerns. Throughout the years the measurement of true BTI degradation which incorporate fast recovery component is a key focus for the faster ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cff02cd72ddb42de93a9936eed2f3ef
https://doi.org/10.1109/ipfa49335.2020.9260732
https://doi.org/10.1109/ipfa49335.2020.9260732
Autor:
Gernot Krause, Talha Chohan, Steffen Lehmann, Thomas Mikolajick, Jens Trommer, Germain Bossu, Stefan Slesazeck
The growing interest in high speed and RF technologies assert for the importance of reliability characterization beyond the conventional DC methodology. In this work, the influence of bias temperature instability (BTI) stress on RF small signal param
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9e05a571231eba0b59884f6f42c850f0
https://tud.qucosa.de/id/qucosa:79705
https://tud.qucosa.de/id/qucosa:79705
Autor:
Frank Ellinger, B. Peng, Xin Xu, Sabine Kolodinski, C. Esposito, Maciej Wiatr, Paolo Valerio Testa, Corrado Carta, Stefan Slesazeck, Steffen Lehmann, Walter M. Weber, Michael Schroter, M. Drescher, Halid Mulaosmanovic, C. Mart, Violetta Sessi, Jens Trommer, Yves Zimmermann, Wenke Weinreich, Talha Chohan
Publikováno v:
ESSDERC
Highlights from Silicon Device Physics, material sciences and electrical engineering are among the first results to be presented from GFs subcontracts in the IPCEI-project, namely a reconfigurable FET compatible with 22-FDX-technology, a CMOS compati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eddce4e7b992ca0e0c5f5feed9333a73
https://doi.org/10.1109/essderc.2019.8901736
https://doi.org/10.1109/essderc.2019.8901736