Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Takuya TSUTSUMI"'
Autor:
Hyeon-Seok Jeong, Wan-Soo Park, Hyeon-Bhin Jo, In-Geun Lee, Tae-Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Sung-Ho Hahm, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 387-396 (2022)
This paper presents a physics-based analytical channel charge model for indium-rich InxGa1-xAs/In0.52Al0.48As quantum-well (QW) field-effect transistors (FETs) that is applicable from the subthreshold to strong inversion regimes. The model requires o
Externí odkaz:
https://doaj.org/article/dc6ba75799cc45bea3393de3a8a5a735
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps we
Externí odkaz:
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Autor:
Ji-Hoon Yoo, In-Geun Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Publikováno v:
Micromachines, Vol 14, Iss 2, p 439 (2023)
We present a fully analytical model and physical investigation on the source resistance (RS) in InxGa1−xAs quantum-well high-electron mobility transistors based on a three-layer TLM system. The RS model in this work was derived by solving the coupl
Externí odkaz:
https://doaj.org/article/7b6ebff0d2ac43638d46c042c3112e56
Autor:
Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
Materials, Vol 15, Iss 23, p 8415 (2022)
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance mo
Externí odkaz:
https://doaj.org/article/43222bcab01c427883a81bd20339bfe1
Publikováno v:
IEEE Access, Vol 6, Pp 2410-2424 (2018)
It is a significant challenge for telecommunication network operators to immediately restore communication services in the disaster area. To quickly recover telecommunication services in the affected area, this paper proposes a wired and wireless net
Externí odkaz:
https://doaj.org/article/449fe490488f4e4c8d652f5a55d98fd0
Publikováno v:
IEEE Access, Vol 6, Pp 31023-31036 (2018)
The concept of moving cell in cellular systems has been discussed for 5G group mobility where rapidly moving platforms such as trains carry a large number of user terminals. It has been considered to employ wireless backhaul for moving cell, the prob
Externí odkaz:
https://doaj.org/article/253c4433e68a4ea5ad17e0494051082a
Autor:
Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
Autor:
Shoko Hasegawa, Takuya Tsutsumi, Shunsuke Fukushima, Yoshihiro Okabe, Junna Saito, Mina Katayama, Masato Shindo, Yusuke Yamada, Koichiro Shimomura, Kaori Yoneyama, Kohki Akiyama, Koh Aoki, Tohru Ariizumi, Hiroshi Ezura, Shinjiro Yamaguchi, Mikihisa Umehara
Publikováno v:
International Journal of Molecular Sciences, Vol 19, Iss 9, p 2645 (2018)
Strigolactones (SLs), a group of plant hormones, induce germination of root-parasitic plants and inhibit shoot branching in many plants. Shoot branching is an important trait that affects the number and quality of flowers and fruits. Root-parasitic p
Externí odkaz:
https://doaj.org/article/a5847c7f5bed496783f39c1262e12f07
Autor:
Naota Taura, Tatsuki Ichikawa, Hisamitsu Miyaaki, Yoshiko Kadokawa, Takuya Tsutsumi, Shotaro Tsuruta, Yuji Kato, Osami Inoue, Noboru Kinoshita, Kazuo Ohba, Hiroyuki Kato, Kazuyuki Ohata, Junichi Masuda, Keisuke Hamasaki, Hiroshi Yatsuhashi, Kazuhiko Nakao
Publikováno v:
Gastroenterology Research and Practice, Vol 2012 (2012)
Background. HCV infection is associated with lipid disorders because this virus utilizes the host lipid metabolism to sustain its life cycle. Several studies have indicated that higher concentrations of serum cholesterol and LDL before treatment are
Externí odkaz:
https://doaj.org/article/b3efbb25cd7b4a9583fb043a98042817
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Surajit Chakraborty, Chu-Young Cho, Jae-Moo Kim, Sang-Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2988-2993