Zobrazeno 1 - 10
of 214
pro vyhledávání: '"Takuya Saraya"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 433-439 (2024)
Systematic comparison of dynamic performance has been made among 3300V scaled IGBTs with scaling factor (k) from 1 to 10 by TCAD simulations. The results from a new evaluation method demonstrate superior turn-off dV/dt controllability in scaled IGBTs
Externí odkaz:
https://doaj.org/article/9a5e71c21df8432994f1b2f7a66ee96f
Autor:
Hirotaka Yamada, Satoru Furue, Takehiko Yokomori, Yuki Itoya, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 195-200 (2024)
Thermal annealing process plays an important role in the formation of ferroelectric phase in Hf0.5Zr0.5O2 (HZO) thin films. In this study, the annealing process of the HZO capacitors is demonstrated using ultraviolet (UV)-LED, for the first time. Sin
Externí odkaz:
https://doaj.org/article/5f55f1c4f7454b8cb5a84eb813640f9a
Autor:
Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun-Jung Su, Vita Pi-Ho Hu, Masaharu Kobayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 115-122 (2022)
We have fabricated junctionless N-type silicon-on-insulator (SOI) ferroelectric-HfO2 field effect transistors (FeFETs) with overlap and underlap structures between gate and drain/source regions to investigate the role of gate-induced-drain-leakage (G
Externí odkaz:
https://doaj.org/article/eafa049e2c034233909a0a15c81b3915
Autor:
Jiawen Xiang, Wen Hsin Chang, Takuya Saraya, Toshiro Hiramoto, Toshifumi Irisawa, Masaharu Kobayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 72-77 (2022)
We have experimentally demonstrated memory operation of a HfO2-based ferroelectric FET (FeFET) with an ultrathin MoS2 channel and bottom-gate structure. ZrO2 seed layer enhances ferroelectricity in HfZrO2 by post deposition anneal process. Surface pa
Externí odkaz:
https://doaj.org/article/9878a41d9be94d248a2efef4fb32d0d3
Autor:
Shohei Sekiguchi, Min-Ju Ahn, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1151-1154 (2021)
Subthreshold swing (SS) in a silicon gate-all-around (GAA) nanowire MOSFET with zero body factor is examined from room temperature (RT) down to 4 K. A fully depleted (FD) SOI MOSFET is also evaluated. The values of SS of both transistors decrease in
Externí odkaz:
https://doaj.org/article/c69c3c47dda64fa8928dc8a2869b436f
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 429-434 (2020)
We have investigated transient Id - Vg and Id - Vd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics. We show transient negative capacitance (TNC) with
Externí odkaz:
https://doaj.org/article/4c6d577eb8114bec924b7b5ee3b91d3a
Autor:
Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 717-723 (2020)
We have fabricated and demonstrated ultrathin In-Ga-Zn-O (IGZO) channel ferroelectric HfO2 field effect transistor (FET) with memory operation. Ultrathin-body IGZO ferroelectric FET (FeFET) shows high mobility and nearly ideal subthreshold slop with
Externí odkaz:
https://doaj.org/article/7deaebc2dd0e4e669a27b1d3baef5e45
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 368-374 (2019)
We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predict
Externí odkaz:
https://doaj.org/article/a65021ba604241c1a275f501b9548c34
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 134-139 (2019)
We have investigated device design of HfO2-based ferroelectric tunnel junction (FTJ) memory. Asymmetry of dielectric screening property in top and bottom electrodes is the key for high tunneling electroresistance (TER) ratio. Thus, metal and semicond
Externí odkaz:
https://doaj.org/article/1ec9e255fda64299aee4b31ca1d4ecf9
Autor:
Zhuo Li, Jixuan Wu, Xiaoran Mei, Xingyu Huang, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi
Publikováno v:
IEEE Electron Device Letters. 43:1227-1230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6c4fc3208da300452f3abf47a922840
https://doi.org/10.1109/led.2022.3184316
https://doi.org/10.1109/led.2022.3184316