Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Takuya Naoe"'
Autor:
Yang Liu, Chuantong Chen, Zheng Zhang, Minoru Ueshima, Takeshi Sakamoto, Takuya Naoe, Hiroshi Nishikawa, Yukinori Oda, Katsuaki Suganuma
Publikováno v:
Materials & Design, Vol 224, Iss , Pp 111389- (2022)
Aiming for a suitable die-attached substrate for Ag-sintered joint technology during harsh operating environment, three surface finishes of sputtered Ti/Ag- layers, electroless Ni-/Pt-/Ag- layers, and electroplated Ni-/electroless Ni-/Pt-/Ag- layers
Externí odkaz:
https://doaj.org/article/fb208224d8384035a9ee4f3d159a71d1
Autor:
Toshihiro Kuzuya, Toma Takedachi, Tetsuya Ando, Yasuharu Matsunaga, Ryouya Kobayashi, Yoshihiro Shimotori, Naofumi Nakazato, Hiroshi Nishikawa, Takuya Naoe
Publikováno v:
MATERIALS TRANSACTIONS. 63:794-799
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e08022a098d599564491c8769d42a591
https://doi.org/10.2320/matertrans.mt-mc2022008
https://doi.org/10.2320/matertrans.mt-mc2022008
Autor:
Yang Liu, Chuantong Chen, Katsuaki Suganuma, Takeshi Sakamoto, Minoru Ueshima, Takuya Naoe, Hiroshi Nishikawa
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::309d089abecaf9f219a1f9e597898b4f
https://doi.org/10.1109/ectc51906.2022.00340
https://doi.org/10.1109/ectc51906.2022.00340
Autor:
Hirohiko Endoh, Takuya Naoe, Masanori Miyata, Takaaki Fujimoto, Hidetsugu Miyake, Fuchino Fumihiro, Takahashi Takuya
Publikováno v:
Materials Science in Semiconductor Processing. 83:239-248
In this study, the mechanism of void formation in the Al metal lines of TiN/Al-1%Si-0.5%Cu/TiN anti-refraction coating multi-layer structures has been investigated. The produced voids exhibited distinct characteristics (such as the presence of silico
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dceda279fb6cadc56d40107214bc3d94
https://doi.org/10.1016/j.mssp.2018.04.013
https://doi.org/10.1016/j.mssp.2018.04.013
Autor:
Toshihiro Kuzuya, Toma Takedachi, Tetsuya Ando, Yasuharu Matsunaga, Ryouya Kobayashi, Yoshihiro Shimotori, Naofumi Nakazato, Hiroshi Nishikawa, Takuya Naoe
Publikováno v:
Materials Transactions; 2022, Vol. 63 Issue 6, p794-799, 6p
Autor:
Takuya Naoe
Publikováno v:
Microelectronics Reliability. 55:411-417
The present study examines the cause of fluorine detection during the corrosion of the TiN antireflection coat (ARC) layer of AlSiCu metal lines. When a crack is generated in the tetraethyl orthosilicate (TEOS) oxide or spin-on-glass (SOG) film of an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6086dc8c206a74ee99991e3bb723b368
https://doi.org/10.1016/j.microrel.2014.11.007
https://doi.org/10.1016/j.microrel.2014.11.007
Autor:
Takuya Naoe, Hirohiko Endoh
Publikováno v:
Microelectronics Reliability. 55:207-212
We show that Cu wire connected at the GND terminal tends to corrode more than other terminals after fuming HNO 3 chemical etching. The electrochemical anodic protection method was found effective in preventing the corrosion of Cu wire in all terminal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b5dc6783fc4e9d6165bc9cea26136c6
https://doi.org/10.1016/j.microrel.2014.10.003
https://doi.org/10.1016/j.microrel.2014.10.003
Publikováno v:
Microelectronics Reliability. 54:1433-1442
This study verifies the accuracy of failure localization by a software-based fault diagnosis technique through comparison of the failure localization by photo emission microscope (PEMS) analysis and optical beam induced resistance change (OBIRCH) ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb6cb9d5cdb51051b27d5b3f68637820
https://doi.org/10.1016/j.microrel.2014.03.002
https://doi.org/10.1016/j.microrel.2014.03.002
Publikováno v:
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
In the multilevel interconnection process using the TEOS / SOG/ TEOS films planarization technology, the low refractive index TEOS film and the upper the Metal line layout have much affect the internal SOG film crack. Existence of the large area uppe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ecf135a4cddb0d06de6d82eb443baa7
https://doi.org/10.1109/imfedk.2016.7521665
https://doi.org/10.1109/imfedk.2016.7521665
Autor:
Takuya Naoe, Hirotaka Komoda
Publikováno v:
Microelectronics Reliability. 52:3017-3021
Module devices consist of many electronic components mounted on a glass epoxy resin substrate. In failure analysis of the module device, it is necessary to expose the electronic components while maintaining these full functions. We have developed an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63a2ca9595e2d154a7cdea96d2266b45
https://doi.org/10.1016/j.microrel.2012.07.003
https://doi.org/10.1016/j.microrel.2012.07.003