Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Takuya Hoshi"'
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps we
Externí odkaz:
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Autor:
Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Surajit Chakraborty, Chu-Young Cho, Jae-Moo Kim, Sang-Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2988-2993
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b5fbf60a499b5e14c02c350cf6d8d8d
https://doi.org/10.1109/ted.2023.3268626
https://doi.org/10.1109/ted.2023.3268626
Publikováno v:
IEEJ Transactions on Electronics, Information and Systems. 142:342-347
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa1ba61a9960313f49254e340d3d44ab
https://doi.org/10.1541/ieejeiss.142.342
https://doi.org/10.1541/ieejeiss.142.342
Publikováno v:
JPN. J. APPL. PHYS.. 62
In this study, AlGaN/GaN high-electron-mobility transistors with 65 and 38 nm channel layers and back-barrier layers were fabricated. The isolation process resulted in damage related to the thickness of the channel layer, which deteriorated propertie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adebd97e993af9469b2d2ae9fba8d9be
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887487
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100887487
Autor:
Kyungho Park, Jae-Moo Kim, Walid Amir, Tae-Woo Kim, Ki-Yong Shin, Hiroki Sugiyama, Chu-Young Cho, Takuya Hoshi, Takuya Tsutsumi, Hideaki Matsuzaki, Ju-Won Shin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Scientific Reports
Scientific Reports
The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::60362455c4bce92f49e1b352eac53f6c
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Autor:
Walid Amir, Ju-Won Shin, Surajit Chakraborty, Ki-Yong Shin, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hyuk-Min Kwon, Tae-Woo Kim
Publikováno v:
2022 Asia-Pacific Microwave Conference (APMC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a890d96a827802c1677416792ab2edb8
https://doi.org/10.23919/apmc55665.2022.10000060
https://doi.org/10.23919/apmc55665.2022.10000060
Autor:
Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
Materials; Volume 15; Issue 23; Pages: 8415
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38377ed4ae7029cb139af821eed46a86
Publikováno v:
IEEE Electron Device Letters. 41:697-700
We fabricated InGaP/GaAsSb/InGaAsSb/InP double heterojunction bipolar transistors (DHBTs) with an aggressive lateral and vertical scaling technology to improve the current gain cutoff frequency ( ${f}_{\text {t}}$ ) further. A 13-nm-thick GaAsSb/InGa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5a570c7566a85192a7819cd943ec16d
https://doi.org/10.1109/led.2020.2982497
https://doi.org/10.1109/led.2020.2982497
Publikováno v:
BCICTS
We report on InP/GaAsSb-based type-II double-heterojunction bipolar transistor (DHBT) scaling and transfer technology on SiC substrate to improve RF performance for THz applications. While vertical and lateral scaling is essential to boost the RF per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9066e30b936b370bc427b888d4703ee
https://doi.org/10.1109/bcicts48439.2020.9392903
https://doi.org/10.1109/bcicts48439.2020.9392903