Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Takuro Sakamoto"'
Autor:
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1258-1263 (2019)
A high Hall-effect mobility of 1,250 cm2V1s−1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS2 film
Externí odkaz:
https://doaj.org/article/19a6e270e1e647a884d4be0a8c15582f
Publikováno v:
Nihon Hinyokika Gakkai zasshi. The japanese journal of urology. 112(4)
A 78-year-old man was referred to our institution for the evaluation of macroscopic hematuria and a bladder tumor for which we initially performed a transurethral resection of the bladder tumor. Pathological examination revealed that the tumor was a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd86911d049e765415981a44eb9f041d
https://pubmed.ncbi.nlm.nih.gov/36261353
https://pubmed.ncbi.nlm.nih.gov/36261353
Autor:
Atsushi Ogura, Naomi Sawamoto, Yuya Oyanagi, Kentaro Matsuura, Hitoshi Wakabayashi, Seiya Ishihara, Yusuke Hibino, Masaya Hamada, Takuro Sakamoto
Publikováno v:
Vacuum and Surface Science. 62:611-616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54aeccc0b2936f49afff995803fddfd2
https://doi.org/10.1380/vss.62.611
https://doi.org/10.1380/vss.62.611
Autor:
Kuniyuki Kakushima, Takuro Sakamoto, Kentaro Matsuura, Iriya Muneta, Masaya Hamada, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1258-1263 (2019)
A high Hall-effect mobility of 1,250 cm2V1s−1 is achieved in ZrS2 film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS2 film was obtained by sputtering and sulfurization. It was confirmed that a layered ZrS2 film
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c77c04164d3bd695ab0aa93906f14f44
https://ieeexplore.ieee.org/document/8848462/
https://ieeexplore.ieee.org/document/8848462/
Autor:
Sei-ichiro Sakata, Takuro Sakamoto
Publikováno v:
ASCE-ASME J Risk and Uncert in Engrg Sys Part B Mech Engrg. 5
This paper describes an efficient computational method for estimating the probabilistic properties of the maximum microscopic stresses in a unidirectional fiber-reinforced composite material against microscopic random variations of fibers locations.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01d542c4b46c983cc2ada6cfaa9e685a
https://doi.org/10.1115/1.4043400
https://doi.org/10.1115/1.4043400
Autor:
Kentarou Matsuura, Kuniyuki Kakushima, Kazuo Tsutsui, K. Parto, Haruki Tanigawa, Masaya Hamada, Atsushi Hori, Wei Cao, Takuya Hamada, K. Banerjee, H. Wakabayashi, Atsushi Ogura, Takamasa Kawanago, Iriya Muneta, Takuro Sakamoto
Publikováno v:
2019 19th International Workshop on Junction Technology (IWJT).
We have successfully fabricated chip-level integrated nMISFETs with sputtered molybdenum disulfide (MoS 2 ) thin channel using sulfur-powder annealing (SPA) and molybdenum disilicide (MoSi 2 ) contact which show n-type-normally-off operation in accum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4e18403d696cf66077db37057f6a4b8
https://doi.org/10.23919/iwjt.2019.8802622
https://doi.org/10.23919/iwjt.2019.8802622
Autor:
Kentaro Matsuura, Hitoshi Wakabayashi, Kazuo Tsutsui, Masaya Hamada, Kuniyuki Kakushima, Takuya Hoshii, Iriya Muneta, Takuro Sakamoto
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
ZrS 2 film with polycrystalline two-dimensional atomic film was performed for large area application. It was confirmed that a layered ZrS 2 film on a SiO 2 /Si substrate was successfully achieved by hightemperature sputtering and sulfur compensation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a696728bce7a87f016b95be41460fb4
https://doi.org/10.1109/edtm.2019.8731243
https://doi.org/10.1109/edtm.2019.8731243
Autor:
Atsushi Hori, Kazuo Tsutsui, Takuya Hamada, Takuro Sakamoto, Atsushi Ogura, Hitoshi Wakabayashi, Haruki Tanigawa, Takamasa Kawanago, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Masaya Hamada
Publikováno v:
Japanese Journal of Applied Physics. 59:080906
We demonstrate chip-level integrated n-type metal–insulator–semiconductor field effect transistors with a sputtered molybdenum disulfide (MoS2) thin channel and titanium nitride top-gate electrode, all defined by optical lithography. The devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::31595b5e06360173126c3411d880a705
https://doi.org/10.35848/1347-4065/aba9a3
https://doi.org/10.35848/1347-4065/aba9a3
Autor:
Takuya Hoshii, Kentaro Matsuura, Hitoshi Wakabayashi, Takumi Ohashi, Haruki Tanigawa, Masaya Hamada, Kazuo Tsutsui, Kuniyuki Kakushima, Iriya Muneta, Takuro Sakamoto
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Layered MoS 2 film was formed on a SiO 2 substrate by sputtering and Al 2 O 3 film was deposited as passivation film on the MoS 2 film, an annealing was performed in sulfur atmosphere in order to compensate sulfur defects and improve crystallinity. B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9dbd26942c264a7a44868b0efb9bf26
https://doi.org/10.1109/s3s.2018.8640213
https://doi.org/10.1109/s3s.2018.8640213
Autor:
Kazuo Tsutsui, Kentaro Matsuura, Takuro Sakamoto, Yuuta Suzuki, Iriya Muneta, Hitoshi Wakabayashi, Takumi Ohashi, Kuniyuki Kakushima, Nobuyuki Ikarashi
Radio-frequency magnetron sputtering method enables us to deposit a layered $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film on a large-area silicon substrate. However, mobility of the sputtered $\mathrm {M}\mathrm {o}\mathrm {S}_{2}$ film has not yet re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::555c2cc0e0e0543c9703c50c3ece9988
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100795211
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100795211
