Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Takumi Miyagawa"'
Autor:
Atsushi Tomita, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-7 (2023)
Abstract AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) are expected to have various applications, including sensing and printing, and light with ultraviolet-C (UVC) wavelengths has a virus inactivation effect. The metalorganic vapor phase
Externí odkaz:
https://doaj.org/article/29e103fadc464c4ca37e8c1d7e4043c7
Autor:
Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-7 (2023)
Abstract Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate. However, the low growth temperature in AlN
Externí odkaz:
https://doaj.org/article/75b49090189f42ecadb5ba850f1f5471
Autor:
Kentaro Nagamatsu, Shota Tsuda, Takumi Miyagawa, Reiya Aono, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract AlGaN-based deep ultraviolet light-emitting diodes (LEDs) have a wide range of applications such as medical diagnostics, gas sensing, and water sterilization. Metal–organic vapor phase epitaxy (MOVPE) method is used for the growth of all-i
Externí odkaz:
https://doaj.org/article/35b9cacf66134d788825004655b24b0c
Autor:
Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c5758fcc78d79a3da30c9706666a35a
https://doi.org/10.1117/12.2607569
https://doi.org/10.1117/12.2607569
Autor:
Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu
Publikováno v:
Gallium Nitride Materials and Devices XVII.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cc7f37ee709bfeb058f80975716a035b
https://doi.org/10.1117/12.2607577
https://doi.org/10.1117/12.2607577