Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Takuma Narahara"'
Autor:
Narahara, Takuma, Sato, Shinichiro, Kojima, Kazutoshi, Yamazaki, Yuichi, Hijikata, Yasuto, Ohshima, Takeshi, Takuma, Narahara, Shinichiro, Sato, Yuichi, Yamazaki, Takeshi, Ohshima
Publikováno v:
Materials Science Forum. 1004:349-354
Spin defects of which states can be manipulated in Silicon Carbide (SiC) have drawn considerable attention because of their applications to quantum technologies. The single negatively-charged pairs of VSi and nitrogen atom (N) on an adjacent C site (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::3b778d7e48db4260dd97f3d53da752d1
https://repo.qst.go.jp/records/80305
https://repo.qst.go.jp/records/80305
Autor:
Takeshi Ohshima, Kazutoshi Kojima, Yasuto Hijikata, Shin-ichiro Sato, Yuichi Yamazaki, Takuma Narahara
Publikováno v:
Materials Science Forum. 1004:349-354
Spin defects of which states can be manipulated in Silicon Carbide (SiC) have drawn considerable attention because of their applications to quantum technologies. The single negatively-charged pairs of VSi and nitrogen atom (N) on an adjacent C site (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dda23d7ad94d7d8e1689e6c044d8be3
https://doi.org/10.4028/www.scientific.net/msf.1004.349
https://doi.org/10.4028/www.scientific.net/msf.1004.349
現在、炭化ケイ素(SiC)は結晶多形(ポリタイプ)を持ち、ポリタイプの違いによって物性が異なることが見出されている。この内、4H-SiCはデバイス応用に向けて物理的性質が最も優れている
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::681f4f32a0575a90c4cbd3b0a70bfa07
https://repo.qst.go.jp/records/82435
https://repo.qst.go.jp/records/82435
Publikováno v:
Applied Physics Express. 14(2):021004
Nitrogen-vacancy (NCVSi−) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi− center formation in N-doped 4H-SiCs by hydrogen ion irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::dc1c975e9cd43f370ea1cd85e48a0419
https://repo.qst.go.jp/records/81766
https://repo.qst.go.jp/records/81766
Publikováno v:
Applied Physics Express. 14:021004
Nitrogen-vacancy (NCVSi −) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi − center formation in N-doped 4H-SiCs by hydrogen ion i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b2aa2e4d351aff0d96d44d5cd397233
https://doi.org/10.35848/1882-0786/abdc9e
https://doi.org/10.35848/1882-0786/abdc9e
Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
Autor:
Yuta Abe, Shin-ichiro Sato, Yasuto Hijikata, Takuma Narahara, Takeshi Ohshima, Takahide Umeda
Publikováno v:
Journal of Applied Physics. 126:083105
NCVSi− centers in SiC [nitrogen-vacancy (NV) centers], which produce near-infrared (NIR) photoluminescence (PL) at room temperature, is expected to have applications as quantum sensors for in vivo imaging and sensing. To realize quantum sensing usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c41491e906820dfec990720f79c28ef1
https://doi.org/10.1063/1.5099327
https://doi.org/10.1063/1.5099327
Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties
Autor:
Sato, Shinichiro, Narahara, Takuma, Abe, Yuta, Hijikata, Yasuto, Umeda, Takahide, Ohshima, Takeshi, Shinichiro, Sato, Takuma, Narahara, Yuta, Abe, Takeshi, Ohshima
Publikováno v:
Journal of Applied Physics. 126(8):083105
NCVSi− centers in SiC [nitrogen-vacancy (NV) centers], which produce near-infrared (NIR) photoluminescence (PL) at room temperature, is expected to have applications as quantum sensors for in vivo imaging and sensing. To realize quantum sensing usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::46ea6f5c6e565c19056273873707aea4
https://repo.qst.go.jp/records/77566
https://repo.qst.go.jp/records/77566