Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Takuma Nanjo"'
Autor:
Tatsuro Watahiki, Hidetoshi Koyama, Takuma Nanjo, Imai Akifumi, T. Imazawa, Yoshitsugu Yamamoto, Naruhisa Miura, A. Kiyoi, Tetsuro Hayashida
Publikováno v:
Electronics Letters, Vol 57, Iss 17, Pp 670-671 (2021)
SiO2 film deposition and subsequent high‐temperature annealing resulted in the generation of a two‐dimensional electron gas (2DEG) at Al(Ga)N/GaN hetero‐interfaces, of which the 2DEG was originally fully depleted. The obtained mobilities and sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45301703e742f18253b0a44b4ef082bf
https://doaj.org/article/2caa1d42cf174e1bbe01e615472d5c46
https://doaj.org/article/2caa1d42cf174e1bbe01e615472d5c46
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1015
An extrinsic electron induced by a dielectric (EID) AlGaN/GaN MOS high-electron-mobility transistor (HEMT) on Si substrate was designed and investigated. The EID structure with SiO2 deposition and subsequent high-temperature annealing, which induces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd08153c374403ca6441944afca20c01
https://doi.org/10.35848/1347-4065/ac3dca
https://doi.org/10.35848/1347-4065/ac3dca
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBD09
The effects of post-annealing processes for normally-off GaN metal-oxide semiconductor heterojunction field-effect transistors (MOS-HFETs) with a thin AlN barrier layer are investigated. These annealing processes are post-deposition annealing (PDA) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab9de0c80ae4cdc0bce37c9edfdf02b5
https://doi.org/10.7567/1347-4065/aafb5f
https://doi.org/10.7567/1347-4065/aafb5f
Publikováno v:
Extended Abstracts of the 2016 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b58cef3d3129a655da5ce1216f64c7b
https://doi.org/10.7567/ssdm.2016.n-6-04l
https://doi.org/10.7567/ssdm.2016.n-6-04l
Publikováno v:
Electronics Letters. 50:1577-1579
The high-frequency characteristics of high electron mobility transistors applying AlGaN for a channel layer (AlGaN channel HEMTs) with greater impacts of alloy disorder scattering than those in conventional HEMTs with a GaN channel layer (GaN channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9111de72f53e75e00701b0987af52de
https://doi.org/10.1049/el.2014.1874
https://doi.org/10.1049/el.2014.1874
Publikováno v:
physica status solidi c. 3:2364-2367
Selective doping using ion implantation has been developed for the source/drain contacts of AlGaN/GaN high electron mobility transistors (HEMTs). As the annealing temperature of the electrical activation increased, the gate leakage current increased,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed2e7a29014e3d393dae3d044320558e
https://doi.org/10.1002/pssc.200565135
https://doi.org/10.1002/pssc.200565135
Autor:
Tatsuo Ozeki, Yuji Abe, Takashi Jimbo, Muneyoshi Suita, Narihisa Miura, Takuma Nanjo, Hiroyasu Ishikawa, T. Egawa, Toshiyuki Oishi
Publikováno v:
Solid-State Electronics. 48:689-695
Recent progress in GaN based high electron mobility transistors (HEMTs) has revealed them to be strong candidates for future high power devices with high frequency operation. In order to extract and utilize the favorable GaN material properties, howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd3fd17d9e78d965547758df1b67de7
https://doi.org/10.1016/j.sse.2003.07.006
https://doi.org/10.1016/j.sse.2003.07.006
Autor:
Takuma Nanjo, Takashi Egawa, Naruhisa Miura, Hiroyasu Ishikawa, Yuji Abe, Toshiyuki Oishi, Muneyoshi Suita, Tatsuo Ozeki
Publikováno v:
SHINKU. 47:328-333
Zn ion implantation along the c axis was investigated in order to fabricate a highly resistive GaN layer. It was calculated that Zn ions effectively transfer their energy to the crystal atoms due to the heavy mass. This energy transfer was able to cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e25d067fd79a34965a36a67350c3c9c
https://doi.org/10.3131/jvsj.47.328
https://doi.org/10.3131/jvsj.47.328
Autor:
Toshiyuki Oishi, Yuji Abe, Takashi Egawa, Muneyoshi Suita, Hiroyasu Ishikawa, Tatsuo Ozeki, Takuma Nanjo, Takashi Jimbo, Naruhisa Miura
Publikováno v:
Journal of Applied Physics. 94:1662-1666
Highly resistive layers are formed by the implantation of Zn ion along the c axis of GaN and AlGaN/GaN epitaxial layers. Heavy ions such as Zn have been desirable for the formation of highly resistive layers, because ions effectively transferred thei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e226eca43fbbcbb7afbb09bb22e328a6
https://doi.org/10.1063/1.1590412
https://doi.org/10.1063/1.1590412
Publikováno v:
Applied Physics Express. 10:061003
In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (W p) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::581f83183753b6a4d153945ec0a0b928
https://doi.org/10.7567/apex.10.061003
https://doi.org/10.7567/apex.10.061003