Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Takuma KATASE"'
Publikováno v:
Journal of Smart Processing. 11:227-232
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d79b5eee76c813626760674ee6f5672
https://doi.org/10.7791/jspmee.11.227
https://doi.org/10.7791/jspmee.11.227
Publikováno v:
IMAPSource Proceedings. 2022
The various kinds of the packaging technologies such as 2.nD, 2.5D, 3D are highly studied with the rapid development of miniaturization and high density of semiconductor packaging. This trend increases the importance of fine pitch interconnect. To ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::853e65282393bb5c74c84b2e2ee689eb
https://doi.org/10.4071/001c.74592
https://doi.org/10.4071/001c.74592
Publikováno v:
International Symposium on Microelectronics. 2016:000638-000643
SnAg electroplating method is widely used in the formation of LF solder bump for flip chip connection. While electroplating is able to form void free solder bump in a suitable operating condition, void may occur suddenly when used in mass production.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfe70fd5f7c2cbf2a3a78024570a19f8
https://doi.org/10.4071/isom-2016-thp44
https://doi.org/10.4071/isom-2016-thp44
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2014:001643-001669
Solder bumping is one of the key technologies for flip chip connection. Flip chip connection has been moving forward to its further downsizing and higher integration with new technologies, such as Cu pillar, micro bump and Through Silicon Via (TSV).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::872d431322b7e3766fbd975865df30bb
https://doi.org/10.4071/2014dpc-wp24
https://doi.org/10.4071/2014dpc-wp24
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2013:000751-000777
Flip chip connection has been applied to a lot of applications in order to shorten the connection length of high performance devices. Solder bumping is one of the key technologies for flip chip connections, and its quality makes a large impact on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3912e1777dda9cbbb47bd8c21f3997bb
https://doi.org/10.4071/2013dpc-tp21
https://doi.org/10.4071/2013dpc-tp21
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2012:000944-000967
Flip chip connection has been applied to a lot of applications to shorten the connection length for high performance. Solder bumping is one of the key technologies for flip chip connection, and its quality strongly brings large impact on the reliabil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d3b731e75af52e11b784a804d1832a
https://doi.org/10.4071/2012dpc-tp22
https://doi.org/10.4071/2012dpc-tp22
Publikováno v:
ELECTROCHEMICAL AND SOLID STATE LETTERS. 9(4):C69-C72
Galvanic contact formation of a Cu-Sn alloy layer was investigated using an ionic liquid, trimethyl-n-hexylammonium bis[(trifluoromethyl)sulfonyl]amide, as a solvent for an electrolytic bath. The use of the ionic liquid rendered it possible to raise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d71dd77f866d952c7227e8e2c77d9ed
http://hdl.handle.net/2433/34929
http://hdl.handle.net/2433/34929
Publikováno v:
Science and Technology of Advanced Materials. 7:502-510
The ionic liquid, trimethyl-n-hexylammonium bis((trifluoromethyl)sulfonyl)amide (TMHA–Tf2N), has a wide electrochemical window of more than 5 V and is considered to be hydrophobic because of two –CF3 groups in its Tf2N− anion. However, a small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09129e673e1afa515bf4f843ebb1c9a0
https://doi.org/10.1016/j.stam.2006.02.017
https://doi.org/10.1016/j.stam.2006.02.017
Autor:
Toshitake Onishi, Susumu Imashuku, Kuniaki Murase, Yasuhiro Awakura, Takuma Katase, Tetsuji Hirato
Publikováno v:
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::213aa012b1f3657e0d3293a6088e184b
http://hdl.handle.net/2433/4671
http://hdl.handle.net/2433/4671
Autor:
Tetsuji Hirato, Yasuhiro Awakura, Kuniaki Murase, Takuma Katase, Hiroyuki Sugimura, Ryoichi Kurosaki
Publikováno v:
Journal of The Electrochemical Society. 154:D612
Electrochemical alloying of Cu substrate through a reduction-diffusion method was investigated using ionic liquid, trimethyl-n-hexylammonium bis[(trifluoromethyl)sulfonyl]amide, as a solvent for an electrolytic bath. The use of the ionic liquid rende
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::297bf2c011f31ce9930fbd463678c296
https://doi.org/10.1149/1.2776230
https://doi.org/10.1149/1.2776230