Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Takuma Doi"'
Autor:
Jotaro Nagano, Shota Ikeguchi, Takuma Doi, Mitsuo Sakashita, Osamu Nakatsuka, Shigehisa Shibayama
Publikováno v:
Materials Science in Semiconductor Processing. 163:107553
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e74100e1d3d674e698f89650dae5776
https://doi.org/10.1016/j.mssp.2023.107553
https://doi.org/10.1016/j.mssp.2023.107553
Publikováno v:
Computer Vision – ACCV 2020 ISBN: 9783030695408
ACCV (5)
ACCV (5)
This paper proposes a multi-view extension of instance segmentation without relying on texture or shape descriptor matching. Multi-view instance segmentation becomes challenging for scenes with repetitive textures and shapes, e.g., plant leaves, due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61e3965118dbd7e5c883b2b7dadea298
https://doi.org/10.1007/978-3-030-69541-5_35
https://doi.org/10.1007/978-3-030-69541-5_35
Autor:
Takuma Doi, Shigehisa Shibayama, Mitsuo Sakashita, Noriyuki Taoka, Mitsuaki Shimizu, Osamu Nakatsuka
Publikováno v:
Japanese Journal of Applied Physics. 61:021007
We investigated the effect of interface state density on the field-effect mobility (μ FE) of 4H-SiC counter-doped metal-oxide-semiconductor field-effect transistors (MOSFETs). We fabricated counter-doped MOSFETs with three types of gate oxides i.e.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3034090c5e0c5e74f213896dc66950c
https://doi.org/10.35848/1347-4065/ac4555
https://doi.org/10.35848/1347-4065/ac4555
Autor:
Takuma Doi, Shigehisa Shibayama, Mitsuo Sakashita, Kazutoshi Kojima, Mitsuaki Shimizu, Osamu Nakatsuka
Publikováno v:
Applied Physics Express. 15:015501
To obtain an ohmic contact with a flat interface using a low-temperature process, we investigated the behavior of Schottky barrier height (SBH) at the Mg/n-type 4H-SiC interface to low-temperature annealing. Our results revealed that annealing at 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d958ffe8a38f84b3aa3f5e6c4755728
https://doi.org/10.35848/1882-0786/ac407f
https://doi.org/10.35848/1882-0786/ac407f
Publikováno v:
Japanese Journal of Applied Physics. 60:075503
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f3b96c07638e2abd5664acec39f6c1c
https://doi.org/10.35848/1347-4065/ac0ab2
https://doi.org/10.35848/1347-4065/ac0ab2
Autor:
Jariya Buajarern, Takuma Doi, Girija Moona, Kentaro Sugawara, Rina Sharma, Anusorn Tonmueanwai, Wang Shihua, Michael Matus
Publikováno v:
Metrologia. 58:04003
Main text This intercomparison is carried out for step height standards with nominal step sizes 8 nm, 18 nm, 88 nm and 10 µm using non-contact measurement methods, with four participating NMIs. Measurement observation from the pilot laboratory exhib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14e7bf62f0fe83596a8917b150146a36
https://doi.org/10.1088/0026-1394/58/1a/04003
https://doi.org/10.1088/0026-1394/58/1a/04003
Autor:
Osamu Nakatsuka, Wakana Takeuchi, Shigehisa Shibayama, Mitsuaki Shimizu, Takuma Doi, Noriyuki Taoka, Mitsuo Sakashita
Publikováno v:
Applied Physics Letters. 116:222104
The impact of byproducts formed on a 4H–SiC(0001) surface by substrate oxidation on the interface state density (Dit) of Al2O3/4H–SiC gate stacks was investigated in this study, because some C-related byproducts are predicted to have defect state
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d281f0ed1c7ab36723a0c67e42c8a567
https://doi.org/10.1063/1.5143574
https://doi.org/10.1063/1.5143574
Publikováno v:
Japanese Journal of Applied Physics. 59:SGGD16
We investigated the impact of defects formed at the SiO2/4H-SiC interface on the Schottky barrier height of metal/4H-SiC(0001) contacts. We found that an ultra-thin SiC x O y layer remains on the 4H-SiC surface after SiO2 sputtering at various powers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58e861eb911477f5ada62a099cad077e
https://doi.org/10.35848/1347-4065/ab6e06
https://doi.org/10.35848/1347-4065/ab6e06
Autor:
Takuma Doi, Mitsuo Sakashita, Noriyuki Taoka, Shigehisa Shibayama, Wakana Takeuchi, Shigeaki Zaima, Osamu Nakatsuka
Publikováno v:
Japanese Journal of Applied Physics. 58:SB9401
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99c61045cd9764804b579dc35795777b
https://doi.org/10.7567/1347-4065/ab0f24
https://doi.org/10.7567/1347-4065/ab0f24
Autor:
Noriyuki Taoka, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Takuma Doi
Publikováno v:
Japanese Journal of Applied Physics. 58:SBBD05
The interface state density of Al2O3/4H-SiC can be decreased by oxygen radical treatment at room temperature, so we have systematically investigated the mechanism of the interfacial reaction at Al2O3/4H-SiC during oxygen radical treatment. In this st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e746d2617a3e4706f3258fa3c59ae0f1
https://doi.org/10.7567/1347-4065/aafb54
https://doi.org/10.7567/1347-4065/aafb54