Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Taku Aoyama"'
Publikováno v:
Integrated Ferroelectrics. 52:137-145
A high-pressure annealing was applied to a post-annealing process for sol-gel derived PZT thin films. The squareness of D-E hysteresis curves changes depending on both total pressure and oxygen concentration. Moreover, the change follows the product
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa5bb114b2be16b03829fd639860daa
https://doi.org/10.1080/10584580390254367
https://doi.org/10.1080/10584580390254367
Publikováno v:
Integrated Ferroelectrics. 52:137-145
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::319c8652dff900d21e63174da5e3bdbe
https://doi.org/10.1080/743845164
https://doi.org/10.1080/743845164
Autor:
Hiromu Miyazawa, Takeshi Kijima, Koji Ohashi, Eiji Natori, N. Furuya, Masao Nakayama, Taku Aoyama, K. Tanaka, Yasuaki Hamada, Tatsuya Shimoda, Akihito Matsumoto
Publikováno v:
2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics.
We have succeeded in fabricating Pb(Zr,Ti,Nb)O3 (PZTN) thin films with 20-atomic% Nb at B site in ABO3 structure, which was suitable for high density and reliable ferroelectric random access memory (FeRAM). A sol-gel spin-coating method was used to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::801bec67167326ef6bd79f55910f1746
https://doi.org/10.1109/isaf.2007.4393155
https://doi.org/10.1109/isaf.2007.4393155
Publikováno v:
Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da36a6538948c8978183f28e2a2d93aa
https://doi.org/10.7567/ssdm.2004.d-1-1
https://doi.org/10.7567/ssdm.2004.d-1-1
Autor:
Tamio Oguchi, Takeshi Kijima, Tatsuya Shimoda, Hiromu Miyazawa, Taku Aoyama, Takamitsu Higuchi, Eiji Natori
Publikováno v:
MRS Proceedings. 784
Using first principles calculations, we have investigated the electronic structure of Pb(ZrTiNb)O3 (PZTN), a system with a low leakage current and high reliability in thin films. We proposed that in PZTN, the oxygen vacancy is suppressed due to the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fe861127b651487a46c15b431aa1479
https://doi.org/10.1557/proc-784-c3.12
https://doi.org/10.1557/proc-784-c3.12
Autor:
Nakayama Masao, Eiji Natori, Takeshi Kijima, Tatsuya Shimoda, Taku Aoyama, Hiromu Miyazawa, Koji Ohashi, Yasuaki Hamada
Publikováno v:
Japanese Journal of Applied Physics. 44:267
We have succeeded in fabricating Pb(Zr,Ti,Nb)O3 (PZTN) thin films with more than 10 at.% Nb at the B site in the A B O 3 structure, which are suitable for application to high-density and reliable ferroelectric random access memory (FeRAM). To prepare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::412e137ab2160a6907413d922bf6d9e9
https://doi.org/10.1143/jjap.44.267
https://doi.org/10.1143/jjap.44.267
Publikováno v:
Japanese Journal of Applied Physics. 43:6622
KNbO3 epitaxial thin films were fabricated on sapphire r-plane substrates with an MgO buffer layer by pulsed laser deposition. X-ray diffraction measurements revealed that both MgO and KNbO3 were epitaxially grown on the Al2O3 (1-102) substrate with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0a2fff789d62bd857fa0930ee3a7c42
https://doi.org/10.1143/jjap.43.6622
https://doi.org/10.1143/jjap.43.6622
Publikováno v:
The Journal of Physical Chemistry. 93:2666-2668
Uranium isotope effects in the uranyl carbonate complex system were observed by means of cation-exchange chromatography. The isotope separation coefficient {epsilon} of the system has been determined as 3.4 {times} 10{sup {minus}4} at 25{degree}C. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dcb70a1b99b2267d468d2e6422a6662
https://doi.org/10.1021/j100343a082
https://doi.org/10.1021/j100343a082
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