Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Takeyoshi Matsuda"'
Autor:
Hitoshi Sasaki, Sadahiro Kato, Yoshihiro Sato, Masayuki Iwami, Seikoh Yoshida, Takeyoshi Matsuda
Publikováno v:
Journal of Crystal Growth. 298:305-309
Pit arrays forming a network structure were observed by an atomic force microscopy (AFM) on an AlGaN surface of AlGaN/GaN heterostructure on a Si(1 1 1) substrate. In order to clarify the origin of these pit arrays, AlGaN/GaN layers were investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45bc50dd413003e9ca0a6f201bec142
https://doi.org/10.1016/j.jcrysgro.2006.10.058
https://doi.org/10.1016/j.jcrysgro.2006.10.058
Autor:
T. Muroga, Hirokazu Sasaki, Takeyoshi Matsuda, Yuh Shiohara, Tsukasa Hirayama, Fusako Iwase, Teruo Izumi, Takashi Saitoh, Takeharu Kato, Yutaka Yamada, Yasuhiro Iijima
Publikováno v:
Journal of Electron Microscopy. 53:497-500
We have developed a focused ion beam (FIB)-Ar ion-milling technique for high-resolution transmission electron microscopy. A micrometresized specimen was mounted on a cross section of metal foil of a few micrometres thick, using FIB microsampling. Fol
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d22c7caa5bd219e57990f2bcb8c6d299
https://doi.org/10.1093/jmicro/dfh067
https://doi.org/10.1093/jmicro/dfh067
Publikováno v:
Surface and Interface Analysis. 35:108-112
We have developed a lattice image analysis method that gives lattice parameters directly from the lattice image of multiple quantum well (MQW) laser diodes, in order to judge whether the strain-compensated structure is adopted or not. The method can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3433c3688d2097b83da26c6c58f803
https://doi.org/10.1002/sia.1504
https://doi.org/10.1002/sia.1504
Autor:
Yoshihiro Sato, Sadahiro Kato, Takeyoshi Matsuda, Masayuki Iwami, Hitoshi Sasaki, Seikoh Yoshida
Publikováno v:
Japanese Journal of Applied Physics. 45:2531-2533
An AlGaN/GaN heterostructural layer with a crack-free smooth surface was grown on multiple buffer layers formed on a Si(111) substrate. On the AlGaN surface, pit arrays forming a network structure were observed by atomic force microscopy (AFM). In or
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2387268c3c1eb37b9b510fa537bb89d9
https://doi.org/10.1143/jjap.45.2531
https://doi.org/10.1143/jjap.45.2531
Autor:
Kazuaki Nishikata, Hitoshi Shimizu, F. Iwase, Yoshiyuki Hirayama, Takeyoshi Matsuda, Michinori Irikawa
Publikováno v:
Journal of Crystal Growth. 150:1328-1332
Dependence of critical layer thickness ( h c ) and photoluminescence (PL) intensity on growth temperature ( T g ) was investigated for 1% compressively strained Ga 0.32 In 0.68 As/AlInAs on InP. We found, for the first time, a strong T g dependence o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5cf8ebad68e3280883fab8794a5445b
https://doi.org/10.1016/0022-0248(95)80154-5
https://doi.org/10.1016/0022-0248(95)80154-5
Publikováno v:
Springer Proceedings in Physics ISBN: 9781402086144
This paper describes a method to map dopant distributions in compound semiconductors by off-axis electron holography. A cross-sectional transmission electron microscopy (TEM) specimen with n+, n− and p gallium arsenide thin films was prepared using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d2837904cdfbafa2b6bb99bafcc2a3d
https://doi.org/10.1007/978-1-4020-8615-1_85
https://doi.org/10.1007/978-1-4020-8615-1_85
Autor:
Takeyoshi Matsuda, Riki Kawashima
Publikováno v:
Journal of the Physical Society of Japan. 59:3727-3731
The electric properties in temperature region from room temperature to -65°C along a direction perpendicular to (100) of a samarium nitrate crystal have been measured. The anomalous behaviors have been found in the temperature region from ∼10°C t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c514c8d7c26f1a9c0c6f24f1834f045a
https://doi.org/10.1143/jpsj.59.3727
https://doi.org/10.1143/jpsj.59.3727
Autor:
Takeyoshi Matsuda, H. Ishii, R. Nakasaki, T. Hirayama, S. Ootomo, F. Iwase, K. Yamamoto, Hirokazu Sasaki
Publikováno v:
Applied Physics Letters. 89:244101
This letter presents a method to map dopant concentration in compound semiconductors by off-axis electron holography. Using the microsampling technique of a focused ion beam, the authors prepared a cross sectional test specimen with n+(3.0×1018cm−
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b447c8edd1ccdfcf71532db77e68e8aa
https://doi.org/10.1063/1.2402907
https://doi.org/10.1063/1.2402907
Autor:
Takeyoshi Matsuda, Hirotatsu Ishii, Yoshihiro Ishitani, Seikoh Yoshida, Song-Bek Che, Wataru Terashima, Akihiko Yoshikawa
Publikováno v:
Applied Physics Letters. 86:261903
We have succeeded in the growth of very-fine-structure InN∕InGaN (3–16nm∕9nm) multi-quantum wells (MQWs) on GaN underlayer and characterized them by transmission electron microscopy (TEM), high-resolution x-ray diffraction (XRD), and photolumin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9c43ee69ecb596ccc965978e8360197
https://doi.org/10.1063/1.1954877
https://doi.org/10.1063/1.1954877
Publikováno v:
Materia Japan. 40:1006-1006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdb814db4b125ea10c18f5aa7d782ef6
https://doi.org/10.2320/materia.40.1006
https://doi.org/10.2320/materia.40.1006