Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Takeya Shimomura"'
Autor:
Hiroshi Mohri, Kouji Yoshida, Katsutoshi Suzuki, Naoya Hayashi, Masaaki Kurihara, Abe Makoto, Morihisa Hoga, Takeya Shimomura
Publikováno v:
Microelectronic Engineering. 84:999-1002
Templates with analog relief surface for UV-nanoimprint lithography are expected to imprint 3D optical elements or micro lens array with a single process cycle. An originally developed direct-writing technique is introduced as a dot density modulatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17091df1fc10f1c0b97be2fbad594d6d
https://doi.org/10.1016/j.mee.2007.01.137
https://doi.org/10.1016/j.mee.2007.01.137
Publikováno v:
Physica B: Condensed Matter. :741-744
We have investigated photoluminescence (PL) properties of high-quality ZnO thin films prepared by an RF-magnetron sputtering method. The X-ray-diffraction patterns indicate that the crystalline thin film is preferentially oriented along the [0 0 0 1]
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b4f1c2a21d1565109697410c6e5616e
https://doi.org/10.1016/j.physb.2005.12.185
https://doi.org/10.1016/j.physb.2005.12.185
Publikováno v:
Journal of Luminescence. 112:191-195
We have investigated optical properties of high-quality ZnO thin films grown by a sputtering method. By introducing a low-temperature buffer layer of ZnO, the lattice-mismatched strain is relaxed and the crystallinity is improved remarkably. In the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42e4357baa2e34eac7375e0bbed9178c
https://doi.org/10.1016/j.jlumin.2004.09.054
https://doi.org/10.1016/j.jlumin.2004.09.054
Autor:
Takeya Shimomura, Hideki Ichida, Masaaki Nakayama, Yasuo Kanematsu, Kohji Mizoguchi, DaeGwi Kim
Publikováno v:
Journal of Luminescence. :396-398
We have investigated the time-resolved photoluminescence (PL) spectra of CuI thin films under intense excitation conditions in the time region up to 25 ps. In the time-integrated PL spectra, we have clearly observed the PL band originated from the in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4da079fb182b1c8756eedfc5b2a85f5d
https://doi.org/10.1016/j.jlumin.2006.01.151
https://doi.org/10.1016/j.jlumin.2006.01.151
Autor:
Chia-Wen Lin, Jack Jau, Yan Zhao, Tadahiko Takikawa, Chiyan Kuan, Fei Wang, Long Ma, Takeya Shimomura, Shogo Narukawa, Naoya Hayashi, Tsukasa Abe
Publikováno v:
SPIE Proceedings.
EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1c310c31a1595864b44be56bb77d6cc
https://doi.org/10.1117/12.976017
https://doi.org/10.1117/12.976017
Publikováno v:
SPIE Proceedings.
EUV lithography is considered the most promising lithography solution for the 16 nm node and beyond. As EUV light is strongly absorbed by all known materials, reflective optics are used instead of conventional transmittance optics applied to ArF and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::850c2e3252a07b74e9b91ead1a47c866
https://doi.org/10.1117/12.916814
https://doi.org/10.1117/12.916814
Autor:
Takeya Shimomura, Abbas Rastegar
Publikováno v:
SPIE Proceedings.
EUV lithography (EUVL) is considered the most attractive solution for semiconductor device manufacturing beyond the 22nm half-pitch node. In EUVL, one of the greatest challenges is the lack of a pellicle, which makes EUV masks prone to particle conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c719586c2f1808d2cba9f448789d397c
https://doi.org/10.1117/12.898576
https://doi.org/10.1117/12.898576
Autor:
Paul D. H. Chung, Cecilia Montgomery, Takeya Shimomura, Jaehyuck Choi, Frank Goodwin, Andy Ma, Han-Ku Cho, In-Kyun Shin, Jinsang Yoon, Alex Friz, Dae-hyuk Kang, Han-Shin Lee
Publikováno v:
SPIE Proceedings.
EUV masks include many different layers of various materials rarely used in optical masks, and each layer of material has a particular role in enhancing the performance of EUV lithography. Therefore, it is crucial to understand how the mask quality a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22c9753e4398c9be443fd5a5ba7b555d
https://doi.org/10.1117/12.896836
https://doi.org/10.1117/12.896836
Autor:
Hiroshi Mohri, Jack Jau, Tadahiko Takikawa, Long Eric Ma, Yuichi Inazuki, Fei Wang, Chiyan Kuan, Takeya Shimomura, Kawashima Satoshi, Naoya Hayashi, Tsukasa Abe, Hong Xiao, Yan Zhao
Publikováno v:
SPIE Proceedings.
Fabrication of defect free EUV masks including their inspection is the most critical challenge for implementing EUV lithography into semiconductor high volume manufacturing (HVM) beyond 22nm half-pitch (HP) node. The contact to bit-line (CB) layers o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::720785f374a13725d77021f755f9e6b4
https://doi.org/10.1117/12.879565
https://doi.org/10.1117/12.879565
Autor:
Yuichi Inazuki, Naoya Hayashi, Hiroshi Mohri, Takeya Shimomura, Tsukasa Abe, Tadahiko Takikawa
Publikováno v:
27th European Mask and Lithography Conference.
Semiconductor lithography candidates toward 2xnm node and beyond include wide variety of options, such as extension of 193i, EUVL, NIL, and ML2. Most of those candidates, except ML2, need critical mask feature to realize effective high volume manufac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8123489cd81ce818f59b7a67b7792b50
https://doi.org/10.1117/12.896886
https://doi.org/10.1117/12.896886