Zobrazeno 1 - 10
of 135
pro vyhledávání: '"Taketomo Sato"'
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065215-065215-5 (2020)
Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, fol
Externí odkaz:
https://doaj.org/article/7a555c14c590414aa052ec0cd678980c
Autor:
Taketomo SATO, Masachika TOGUCHI
Publikováno v:
Denki Kagaku. 89:365-369
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 32:483-488
This paper describes our recent efforts to optimize photo-electrochemical (PEC) etching for fabricating recessed-gate aluminum gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs). Selecting the proper light waveleng
Autor:
Yoshinobu Narita, Naomi Asai, Takehiro Yoshida, Tomoyoshi Mishima, Noboru Fukuhara, Hiroshi Ohta, Fumimasa Horikiri, Kazuki Miwa, Masachika Toguchi, Taketomo Sato
Publikováno v:
IEEE transactions on semiconductor manufacturing. 32(4):489-495
Photoelectrochemical (PEC) etching was used to fabricate deep trench structures in GaN-on-GaN epilayers grown on n-GaN substrates. The width of the side etching was less than $1~\mu \text{m}$ , with high accuracy. The aspect ratio (depth/width) of a
Autor:
Masamichi Akazawa, Yuya Tamamura, Takahide Nukariya, Kouta Kubo, Taketomo Sato, Tetsuo Narita, Tetsu Kachi
Publikováno v:
Journal of Applied Physics. 132:195302
Defect levels in the vicinity of the Al2O3/p-type GaN interface were characterized using a sub-bandgap-light-assisted capacitance–voltage ( C–V) method. For metal–oxide–semiconductor (MOS) diodes prepared using p-type GaN (p-GaN) and Al2O3 fo
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We have investigated AlGaN/GaN high-electron mobility transistors (HEMTs) with a high κ gate dielectric using hafnium silicate (HfSiOx). The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma enhanced atomic layer deposi
Autor:
Taketomo Sato, Masachika Toguchi
Publikováno v:
ECS Transactions. 86:3-14
Publikováno v:
Journal of The Electrochemical Society. 166:H510-H512
Anisotropic electrochemical etching of porous GaN structures by utilizing charge carriers generated by sub-bandgap absorption has been developed. Sub-bandgap light with a photon energy below the bandgap energy was transmitted through bulk GaN, but a
Publikováno v:
Applied Physics Express. 14:111003
We attempted to fabricate GaN nanowires by electrodeless photo-assisted electrochemical (PEC) etching and successive alkaline solution treatment. The sample consisting of n(+)-doped and unintentionally doped GaN grown on a GaN substrate was selective
Publikováno v:
Journal of Applied Physics; 2017, Vol. 121 Issue 18, p1-6, 6p, 1 Diagram, 8 Graphs