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pro vyhledávání: '"Takeshi Yamada Takeshi Yamada"'
Publikováno v:
Japanese Journal of Applied Physics. 32:L473
Selective growth of InGaAsP by Ar ion laser-assisted metalorganic molecular beam epitaxy is studied. Laser irradiation during the In1-x Ga x As1-y P y (x=0.28, y=0.4) growth suppresses the growth rate by about 30% of the growth rate in the nonirradia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b3fcf5f9278b980c8211e85f1e55c9
https://doi.org/10.1143/jjap.32.l473
https://doi.org/10.1143/jjap.32.l473
Publikováno v:
Japanese Journal of Applied Physics; April 1993, Vol. 32 Issue: 4 pL473-L473, 1p
Publikováno v:
Japanese Journal of Applied Physics; November 1992, Vol. 31 Issue: 11 pL1549-L1549, 1p
Autor:
Sugiura, Hideo, Noguchi, Yoshio, Iga, Ryuzo, Takeshi Yamada, Takeshi Yamada, Hiroshi Yasaka, Hiroshi Yasaka
Publikováno v:
Japanese Journal of Applied Physics; February 1991, Vol. 30 Issue: 2 pL286-L286, 1p
Publikováno v:
Japanese Journal of Applied Physics; January 1991, Vol. 30 Issue: 1 pL4-L4, 1p