Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Takeshi Tawara"'
Autor:
Kevin Matsui, Takeshi Tawara, Shinsuke Harada, So Tanaka, Hiroshi Sato, Hiroshi Yano, Noriyuki Iwamuro
Publikováno v:
IEEJ Transactions on Electrical and Electronic Engineering. 18:278-285
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2acd1e76bf8f2a4f6148f7482d9a1d
https://doi.org/10.1002/tee.23727
https://doi.org/10.1002/tee.23727
Autor:
Yudai Kitamura, Hiroshi Yano, Noriyuki Iwamuro, Fumiki Kato, So Tanaka, Takeshi Tawara, Shinsuke Harada, Hiroshi Sato
Publikováno v:
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f39bc5df2811952bbf751df4a819048
https://doi.org/10.1109/ispsd49238.2022.9813646
https://doi.org/10.1109/ispsd49238.2022.9813646
Publikováno v:
Japanese Journal of Applied Physics. 62:016508
A superjunction (SJ) structure in power devices is compatible with low specific on-resistance and high breakdown voltage. To fabricate the SJ structure in SiC power devices, the repetition of ion implantation and epitaxial growth processes is a pract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c8f4f047c5b15f38e204189aca73fd5
https://doi.org/10.35848/1347-4065/acb0a2
https://doi.org/10.35848/1347-4065/acb0a2
Autor:
Yudai Kitamura, Fumiki Kato, So Tanaka, Takeshi Tawara, Shinsuke Harada, Hiroshi Sato, Hiroshi Yano, Noriyuki Iwamuro
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1007
This study investigates the surge current capabilities of embedded Schottky barrier diodes (SBDs) in SiC SBD-integrated trench metal–oxide–semiconductor field effect transistors (MOSFETs) (SWITCH-MOSs) using titanium and nickel for the Schottky m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3a0dff1118432e366b03f8ed8146015
https://doi.org/10.35848/1347-4065/aca61b
https://doi.org/10.35848/1347-4065/aca61b
Publikováno v:
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We developed 3.3 kV-class silicon carbide superjunction (SJ) MOSFETs and demonstrated their excellent static and dynamic properties. The full-SJ device exhibited ultra-low R on A of 3.3 mΩcm2 at room temperature (RT) and 6.2 mΩcm2 at 175 °C. The s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a4de71b5a64ad0a78b19dd673c779f1
https://doi.org/10.23919/ispsd50666.2021.9452273
https://doi.org/10.23919/ispsd50666.2021.9452273
Publikováno v:
Materials Science Forum. 924:269-272
For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca3b5c5ae88fb7569acc36a7e50409c6
https://doi.org/10.4028/www.scientific.net/msf.924.269
https://doi.org/10.4028/www.scientific.net/msf.924.269
Publikováno v:
Materials Science Forum. 897:67-70
Epitaxial growth of 4H-SiC with intentional V or Ti doping was performed to obtain short minority carrier lifetimes, using VCl4 or TiCl4 as the doping sources. The doping efficiencies and quality of the epilayers were compared for H2+SiH4+C3H8 and H2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9197ed777ee7f2fd2c403f84ade8edd8
https://doi.org/10.4028/www.scientific.net/msf.897.67
https://doi.org/10.4028/www.scientific.net/msf.897.67
Publikováno v:
Materials Science Forum. 897:51-54
An epitaxial growth technique for 4H-SiC with B doping was developed to control the carrier lifetimes of the epilayers. A linear relationship was observed between the B doping concentration and the flow rate of tri-ethyl-boron, which was used as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7d17e4fefb6bd8e9f10b068cba76de
https://doi.org/10.4028/www.scientific.net/msf.897.51
https://doi.org/10.4028/www.scientific.net/msf.897.51
Autor:
Takeshi Tawara, Tomohisa Kato, Tetsuya Miyazawa, Hajime Okumura, Yoshiyuki Yonezawa, Masaaki Miyajima, Takumi Fujimoto, Shinichiro Matsunaga, Akihiro Otsuki, Masaki Miyazato, Kensuke Takenaka, Hidekazu Tsuchida, Mina Ryo, Tsunenobu Kimoto
Publikováno v:
Materials Science Forum. 897:419-422
Application of highly N-doped buffer layers or a (N+B)-doped buffer layer to PiN diodes to suppress the expansion of Shockley stacking faults (SSFs) from the epilayer/substrate interface was studied. These buffer layers showed very short minority car
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::245897cfb540da0f848d56226ac4108a
https://doi.org/10.4028/www.scientific.net/msf.897.419
https://doi.org/10.4028/www.scientific.net/msf.897.419
Autor:
Takeshi Tawara, Tetsuya Miyazawa, K. Maeda, Hidekazu Tsuchida, Koichi Murata, Masaki Miyazato
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
Bipolar degradation phenomenon, in which the on-state forward voltage increases with the expansion of stacking faults, is a significant issue for practical applications of 4H-SiC bipolar devices such as PiN diodes and IGBTs. This paper addresses meth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eccaf27ea6b494f0a49df920318afb5f
https://doi.org/10.1109/iedm19573.2019.8993530
https://doi.org/10.1109/iedm19573.2019.8993530