Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Takeshi Mizoguchi"'
Publikováno v:
IEEJ Transactions on Industry Applications. 143:373-379
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab6b6bca75f8f4426b83bd8a4bc4d3dd
https://doi.org/10.1541/ieejias.143.373
https://doi.org/10.1541/ieejias.143.373
Publikováno v:
IEEJ Transactions on Industry Applications. 142:721-728
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d81bd73b622264b2c69a92f6a4b0c57
https://doi.org/10.1541/ieejias.142.721
https://doi.org/10.1541/ieejias.142.721
Autor:
Hideyuki Kikuchihara, Yosuke Miyaoku, Hans Juergen Mattausch, U. Feldmann, A. Tone, M. Miura-Mattausch, Takashi Saito, Takao Yamamoto, Takeshi Mizoguchi
Publikováno v:
IEEE Transactions on Electron Devices. 66:3265-3272
The second generation of the compact HiSIM_IGBT model for circuit simulation is reported. HiSIM_IGBT2 is developed on the basis of an adapted version of the high-voltage mosfet model HiSIM_HV and solves the Poisson equation along the complete device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4c91d6bd43fbdcb318aeb3778f06f8f
https://doi.org/10.1109/ted.2019.2919799
https://doi.org/10.1109/ted.2019.2919799
Autor:
Yosuke Miyaoku, Yuta Tanimoto, Mitiko Miura-Mattausch, Kai Matsuura, Atsushi Saito, Takeshi Mizoguchi, Hans Jurgen Mattausch
Publikováno v:
Solid-State Electronics. 153:59-66
Compact modeling of the 4H-SiC IGBT switching characteristics in circuits is investigated, with a focus on reproducing the temperature-dependent switching performance. For this purpose the HiSIM-IGBT compact model for circuit simulation, previously d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8538dd3a96859504157e15b8cb2c6b5
https://doi.org/10.1016/j.sse.2018.12.019
https://doi.org/10.1016/j.sse.2018.12.019
Autor:
Yuta Tanimoto, Hans Juergen Mattausch, Toshiyuki Naka, Yasuhiro Okada, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Wataru Saito, Takeshi Mizoguchi
Publikováno v:
IEEE Transactions on Electron Devices. 66:106-115
The compact model of HIroshima-University Starc Igfet Model (HiSIM)_GaN for GaN-HEMT devices is reported, which solves the Poisson equation iteratively, in a similar way as the industry-standard compact HiSIM models for other semiconductor devices. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ab607c948bef135ae102cd4f8bb789d
https://doi.org/10.1109/ted.2018.2868284
https://doi.org/10.1109/ted.2018.2868284
Autor:
Yusuke Kawaguchi, Hans Juergen Mattausch, Hajime Nagase, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Takeshi Mizoguchi, Makoto Hashimoto
Publikováno v:
ISDCS
Demands for higher-voltage MOSFET application are increasing, for which a Super-Junction MOSFET, sustaining the voltages in the range of 500V, has been developed based on the trench-type structure. Due to the huge bias applied, a new leakage-current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1676c93d59e11dc170c90f9cdd6e0f5e
https://doi.org/10.1109/isdcs52006.2021.9397904
https://doi.org/10.1109/isdcs52006.2021.9397904
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, we report a newly developed the insulated gate bipolar transistor (IGBT) and the free-wheeling diode (FWD) compact models considered with bipolar carrier dynamics for prediction of power-loss and Electro-Magnetic-Interference (EMI) noi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::557ddf0458c0b809bd11ed8fb94376af
https://doi.org/10.1109/ispsd46842.2020.9170189
https://doi.org/10.1109/ispsd46842.2020.9170189
Autor:
Wataru Saito, Yuta Tanimoto, Hans Jurgen Mattausch, Mitiko Miura-Mattausch, Yasuhiro Okada, Takeshi Mizoguchi, Toshiyuki Naka
Publikováno v:
IEICE Transactions on Electronics. :321-328
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f182e4641f505ca1c856cc2f92dc191
https://doi.org/10.1587/transele.e100.c.321
https://doi.org/10.1587/transele.e100.c.321
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper presents a newly developed compact model of IGBT/IEGTs for prediction of power-loss and Electro-Magnetic-Interference (EMI) noise accurately. The proposed model focuses on the capacitance changes between each terminal during the switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eae850ffde953a36bd8ed4291e4f6dd
https://doi.org/10.1109/ispsd.2019.8757656
https://doi.org/10.1109/ispsd.2019.8757656
Autor:
Wataru Saito, Mitiko Miura-Mattausch, Yuta Tanimoto, Yasuhiro Okada, Takeshi Mizoguchi, Hans Jurgen Mattausch, Toshiyuki Naka
Publikováno v:
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, we report a newly developed compact model HiSIM-GaN [Hiroshima University STARC IGFET Model for GaN high electron mobility transistors (HEMTs)] including a capacitance model, which accurately captures the contributions originating from
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07dc594f1f07db818444110c145c37e2
https://doi.org/10.1109/ispsd.2016.7520829
https://doi.org/10.1109/ispsd.2016.7520829