Zobrazeno 1 - 10
of 72
pro vyhledávání: '"Takeshi Mitani"'
Publikováno v:
AIP Advances, Vol 6, Iss 1, Pp 015207-015207-8 (2016)
Recent development of device fabrication of SiC is awaiting detailed study of the machining of the surfaces. We scratched 4H-SiC surfaces with a sliding microindenter made of a SiC chip, and characterized machining affected layers by micro-Raman spec
Externí odkaz:
https://doaj.org/article/8d460a108b72445e99bb918ea335f9e8
Autor:
Takahiro Yoshizaki, Toru Midorikawa, Kohe Hasegawa, Takeshi Mitani, Taiki Komatsu, Fumiharu Togo
Publikováno v:
PLoS ONE, Vol 9, Iss 9, p e106643 (2014)
It has not hitherto been clarified whether there is an association between dietary behavior and circadian variation in autonomic nervous system activity among shift workers. This study examines diurnal 24-h rhythm in heart rate variability (HRV) and
Externí odkaz:
https://doaj.org/article/e7c6fbeb9b544e449736d1be5507472c
Autor:
Junji Senzaki, Ryoji Kosugi, Keiko Masumoto, Takeshi Mitani, Takeharu Kuroiwa, Hiroshi Yamaguchi
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33f8974c88385508aaf34eb5f009b8ea
https://doi.org/10.1109/irps48227.2022.9764475
https://doi.org/10.1109/irps48227.2022.9764475
Publikováno v:
Vacuum & Surface Science; 2023, Vol. 66 Issue 4, p215-220, 6p
Autor:
Takeshi Mitani, Tomohisa Kato, Naohiro Sugiyama, Hajime Okumura, Isaho Kamata, Hidekazu Tsuchida
Publikováno v:
Materials Science Forum. 1004:427-432
The scratch damage that caused the generation of double Shockley stacking faults (DSFs) in heavily nitrogen doped 4H-SiC crystal was investigated quantitatively. Scratch tests were carried out on 4H-SiC substrates with a nitrogen concentration of 2.6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdb6fa6a309e69c763efaf8d37a62ac7
https://doi.org/10.4028/www.scientific.net/msf.1004.427
https://doi.org/10.4028/www.scientific.net/msf.1004.427
Autor:
Sadafumi Yoshida, Akinobu Takeshita, Shi Yang Ji, Hajime Okumura, Hideharu Matsuura, Tomohisa Kato, Takeshi Mitani, Kazutoshi Kojima, Tatsuya Imamura, Kota Takano, Kohei Ogawa, Kazuma Eto, Kazuya Okuda, Atsuki Hidaka
Publikováno v:
Materials Science Forum. 1004:224-230
We measure the temperature-dependent resistivity (ρ(T)) for thick heavily Al- and Ncodoped p-type 4H-SiC samples grown by chemical vapor deposition (CVD), physical vapor transport (PVT), and solution growth (SG), and investigate their conduction mec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3661ae334fd86e84a17168334eedf6e
https://doi.org/10.4028/www.scientific.net/msf.1004.224
https://doi.org/10.4028/www.scientific.net/msf.1004.224
Autor:
Hiromasa Suo, Hajime Okumura, Takeshi Mitani, Naoyoshi Komatsu, Yuichiro Hayashi, Tomohisa Kato
Publikováno v:
Materials Science Forum. 963:71-74
We have developed the bulk growth technique to reduce threading screw dislocations (TSDs) by combining solution growth and PVT growth methods. More than 80 % of TSDs in original seed crystals were successfully converted to Frank defects on basal plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12b35a52ce5e20c5cca9ca08f5b71efa
https://doi.org/10.4028/www.scientific.net/msf.963.71
https://doi.org/10.4028/www.scientific.net/msf.963.71
Publikováno v:
Materials Science Forum. 924:55-59
We have investigated the dependence of the macrostep height on various additives in solution growth of n-type 4H-SiC. Surface modification by adding transition elements in periods 4‒6 (Sc, Ti, V, Mn, Fe, Co, Ni, Cu, Y, Nb, Mo, Ce, and W) and group
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::262744d4b94b57c1de9a6b0ede37d8ba
https://doi.org/10.4028/www.scientific.net/msf.924.55
https://doi.org/10.4028/www.scientific.net/msf.924.55
Publikováno v:
Journal of Crystal Growth. :126189
The propagation of defects during the hybrid growth, which combines solution growth and physical vapor transport (PVT) growth, for bulk 4H-polytype silicon carbide was examined. During solution growth, more than 80% of the threading screw dislocation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e82992e660d66d92671d332033fc5bb1
https://doi.org/10.1016/j.jcrysgro.2021.126189
https://doi.org/10.1016/j.jcrysgro.2021.126189