Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Takeshi Kamijoh"'
Autor:
Takeshi Kamijoh, Michal Gredziak, Naveena Genay, Hideyuki Iwamura, Takashi Ushikubo, Masahiro Sarashina, Andrzej Mosek, Gyaneshwar C. Gupta, Masayuki Kashima, Hideaki Tamai, Philippe Chanclou, B. Landousies
Publikováno v:
Journal of Lightwave Technology. 27:292-298
World-first coexistence trial of TDM and CDM giga-bit passive optical networks (PONs) was successfully completed. A very shallow minimum isolation of 7 dB between G- and CDM-PON at OLT and ONU in the ITU-T G.984.5 enhancement band was demonstrated. T
Autor:
Hideyuki Iwamura, Takashi Ushikubo, Gyaneshwar C. Gupta, Hideaki Tamai, Takeshi Kamijoh, Masayuki Kashima
Publikováno v:
Journal of Lightwave Technology. 25:193-200
In this paper, next-generation ultralong reach code division multiplexing (CDM) on fiber (COF) passive optical network (COF-PON) based on CDM (multiplexing carried out in electrical domain) presented here. We describe the system configuration, COF tr
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 86:9-17
Electrical interconnection on printed circuit boards and other peripheral technologies cannot keep up with decreasing interconnection dimensions and increasing driving clock speed in LSI technology, so that system performance is degraded. This “I/O
Publikováno v:
Journal of Applied Physics. 87:8243-8250
Light output power versus current, emission spectroscopy and far-field emission patterns have been used to characterize microcavity light emitting diodes (MC-LEDs). Evidence that microcavity effects lead to enhanced emission properties is provided by
Publikováno v:
Journal of Polymer Science Part A: Polymer Chemistry. 38:1642-1646
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 7:656-660
Data are presented showing the precise role of the cavity de-tuning on the emission properties of semiconductor microcavity light emitting diodes (MC-LEDs). Enhanced output power and narrow line width emission have been observed over a wide range of
Publikováno v:
Solid-State Electronics. 43:1655-1663
Wafer bonding has been investigated as a key technology to integrate InP lasers on Si for optoelectronic integrated circuits. The bonding process has been optimized to allow the integration of InGaAsP/InP double-heterostructures (DHs) on Si with keep
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:420-427
Effects of well number on temperature characteristics have been investigated in 1.3-/spl mu/m AlGaInAs-InP compressively strained multiple-quantum-well lasers. Well-number dependence of threshold currents (I/sub th/), external quantum efficiencies (/
Autor:
Takeshi Kamijoh
Publikováno v:
The Review of Laser Engineering. 26:603-607
This paper reviews a recent device processing technology for photonic functional-devices. Material integration technology using direct wafer bonding for flexible integration of photonic functions on a chip is discussed. Some demonstrations on vertica
Publikováno v:
Optical Review. 4:546-549
A novel configuration is proposed for polarization insensitive wavelength conversions using a LiNbO3 waveguide with a periodically domain inverted structure. The proposed configuration consists of multiple rings, which are connected by a polarization