Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Takeshi Isogawa"'
Autor:
Yutaka Kodera, Karen D. Badger, Takeshi Isogawa, Jed H. Rankin, Shinji Akima, Masayuki Kagawa, Anka Birnstein, Jan Heumann, Yusuke Toda, Yoshida Itaru, Masashi Yonetani
Publikováno v:
Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology.
Based on the record for reasonable throughput, 19x nm wavelength inspection is one of the strongest candidates available today for the initial EUV (Extreme Ultraviolet) mask inspection approach until high-throughput E-Beam or actinic inspection is re
Autor:
Toshio Konishi, Karen D. Badger, Takeshi Isogawa, Kazunori Seki, Jan Heumann, Masashi Yonetani, Anka Birnstein, Yutaka Kodera
Publikováno v:
Photomask Technology 2018.
EUV (Extreme Ultraviolet) lithography is one of the most promising techniques for imaging 5-nm node and beyond wafer features. Mask defects that matter are the ones that print during exposure at 13.5 nm wavelength. To support EUV development and prod
Autor:
Takeshi Isogawa, Jan Heumann, Masayuki Kagawa, Yusuke Toda, Masashi Yonetani, Karen D. Badger
Publikováno v:
Photomask Technology 2018.
EUV (Extreme Ultraviolet) lithography is one of the key enabling techniques for imaging 7-nm node and beyond wafer technologies. To ensure mask quality levels will support High Volume Manufacturing (HVM), all “defects that matter”, must be identi
Autor:
Kazunori Seki, Takeshi Isogawa, Masashi Yonetani, Jan Heumann, Karen D. Badger, Yutaka Kodera, Toshio Konishi, Anka Birnstein
Publikováno v:
Photomask Japan 2018: XXV Symposium on Photomask and Next-Generation Lithography Mask Technology.
19x nm defect inspection is the strongest candidate for initial EUV production until high-throughput E-Beam or Actinic inspection is ready. However, EUV mask inspection on an optical, 19x nm wavelength tool has some difficulties compared to optical m
Autor:
Masashi Yonetani, Karen Badger, Rankin, Jed, Shinji Akima, Yusuke Toda, Itaru Yoshida, Masayuki Kagawa, Takeshi Isogawa, Yutaka Kodera, Heumann, Jan, Birnstein, Anka
Publikováno v:
Proceedings of SPIE; 8/29/2019, Vol. 11178, p1-7, 7p
Autor:
Yusuke Toda, Takeshi Isogawa, Michael Fahrenkopf, Yoshifumi Sakamoto, Richard Wistrom, Masayuki Kagawa, Jed H. Rankin, Amy E. Zweber, Thomas Faure, Steven Nash
Publikováno v:
SPIE Proceedings.
Over time mask makers have been driven to low sensitivity e-beam resist materials to meet lithographic patterning needs. For 7-nm logic node, resolution enhancement techniques continue to evolve bringing more complexity on mask and additional mask bu
Autor:
Richard Wistrom, Masayuki Kagawa, Kazuhiro Nishikawa, Yoshifumi Sakamoto, Takeshi Isogawa, Yusuke Toda, Mark Lawliss, Kazunori Seki, Yukio Inazuki, Lin Hu, Ramya Viswanathan, Thomas Faure, Yongan Xu, Amy E. Zweber, Karen D. Badger, Granger Lobb
Publikováno v:
SPIE Proceedings.
In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole p
Publikováno v:
SPIE Proceedings.
A variety of repairs on EUV multilayer were conducted including protection against pattern degradation in manufactural use in order to evaluate feasibility of multilayer repair and the protection schemes. The efficacy of post-repair protection techni
Autor:
Yutaka Kodera, Zhengqing John Qi, Takeshi Isogawa, Karen D. Badger, Shinji Akima, Ravi K. Bonam, Masayuki Kagawa, Kazunori Seki, Jed H. Rankin, Mark Lawliss
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
NAP-PD (Native Acting Phase – Programmed Defects), otherwise known as buried program defects, with attributes very similar to native defects, are successfully fabricated using a high accuracy overlay technique. The defect detectability and visibili
Autor:
Ravi K. Bonam, Masayuki Kagawa, Takeshi Isogawa, Kevin W. Collins, Mark Lawliss, Lin Cheong, Jed H. Rankin, Eisuke Narita, Richard Poro, Luke Bolton, Louis Kindt, Christina Turley
Publikováno v:
Photomask Japan 2015: Photomask and Next-Generation Lithography Mask Technology XXII.
The backside of photomasks have been largely ignored during the last several decades of development, with the exception of avoiding gross damage or defects, as almost all problems are far enough out of the focal plane to have minimal effect on imagin