Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Takeshi Eri"'
Publikováno v:
physica status solidi c. 4:2215-2218
The thermal and electrical properties of high-quality bulk GaN crystals fabricated by hydride vapor phase epitaxy were investigated in the high-carrier-concentration region between 1.0×1018 and 1.24×1019 cm-3. The carrier concentration was almost i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::11d3baa20da15583d3e761b41ff32846
https://doi.org/10.1002/pssc.200674719
https://doi.org/10.1002/pssc.200674719
Publikováno v:
physica status solidi (a). 194:554-558
A novel technique for fabricating large-diameter freestanding GaN wafers has been developed. This technique uses a porous GaN template with a TiN nano-net on top as the starting substrate for hydride vapor-phase epitaxy (HVPE) growth. A mechanically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f1838f7e5de747e8b0a7af4192752c
https://doi.org/10.1002/1521-396x(200212)194:2<554::aid-pssa554>3.0.co
https://doi.org/10.1002/1521-396x(200212)194:2<554::aid-pssa554>3.0.co
Autor:
Akira Usui, Kenji Kobayashi, Haruo Sunakawa, Takeshi Eri, Toshinari Ichihashi, Masatomo Shibata, Yuichi Oshima
Publikováno v:
physica status solidi (a). 194:572-575
We investigate the role of a TiN film on epitaxial growth and crystal quality in the void-assisted separation (VAS) method. Plan-view TEM images show the TiN film contains numerous nanometer-scale holes, resulting in a nano-net structure. X-ray rocki
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a55a53f307d3945d6506160984ecc49
https://doi.org/10.1002/1521-396x(200212)194:2<572::aid-pssa572>3.0.co
https://doi.org/10.1002/1521-396x(200212)194:2<572::aid-pssa572>3.0.co
Autor:
Takeshi Eri, Shunsuke Yamamoto, Takehiro Yoshida, Masatomo Shibata, Kazutoshi Watanabe, Yuichi Oshima, Tomoyoshi Mishima, Ken Ikeda
Publikováno v:
Journal of Crystal Growth. 310:5-7
By using the hydride vapor phase epitaxy and a void-assisted separation method, freestanding 3-in GaN substrates were successfully fabricated for the first time, and the process showed an excellent reproducibility. A thick GaN layer 3.2 in in diamete
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae424b8af412b465aac3749560fd59b
https://doi.org/10.1016/j.jcrysgro.2007.10.014
https://doi.org/10.1016/j.jcrysgro.2007.10.014
Autor:
Toshinari Ichihashi, Yuichi Oshima, Akira Usui, Masatomo Shibata, Kenji Kobayashi, Haruo Sunakawa, Takeshi Eri
Publikováno v:
Japanese Journal of Applied Physics. 42:L1-L3
We have developed a novel technique for preparing large-scale freestanding GaN wafers. Hydride vapor phase epitaxy (HVPE) growth of thick GaN layer was performed on a GaN template with a thin TiN film on the top. After the cooling process of the HVPE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6cb348f8e0b9a8534fb12232056d57f2
https://doi.org/10.1143/jjap.42.l1
https://doi.org/10.1143/jjap.42.l1
Autor:
Yuichi Oshima, Kazutoshi Watanabe, Tomoyoshi Mishima, Masatomo Shibata, Takehiro Yoshida, Takeshi Eri
Publikováno v:
Technology of Gallium Nitride Crystal Growth ISBN: 9783642048289
An outline is presented of the fabrication technique of freestanding GaN wafers by hydride vapor phase epitaxy using the void-assisted separation method and the properties of resulting crystals. A thick GaN layer of large area can be separated with e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5808512cc314102befcb503bbf591f3
https://doi.org/10.1007/978-3-642-04830-2_4
https://doi.org/10.1007/978-3-642-04830-2_4
Autor:
Takeshi Eri, Yuichi Oshima, Takayuki Suzuki, Yusuke Kawaguchi, Kazutoshi Watanabe, Masatomo Shibata, Tomoyoshi Mishima
Publikováno v:
Journal of Applied Physics. 98:103509
The fundamental material parameters associated with GaN, which are important for the design of devices such as light-emitting diodes and laser diodes, were investigated using large high-quality GaN single crystals fabricated through hydride vapor pha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0aa0658a92898e296d3a806c09a7176
https://doi.org/10.1063/1.2132508
https://doi.org/10.1063/1.2132508