Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Takeshi Akatsu"'
Autor:
Bruno Ghyselen, Yves Campidelli, Daniel Bouchier, Philippe Boucaud, Sébastien Sauvage, Daniel Bensahel, Sylvain David, Xavier Checoury, X. Li, Guy Fishman, Olivier Kermarrec, T.-P. Ngo, Takeshi Akatsu, C. Richtarch, M. El Kurdi
Publikováno v:
Thin Solid Films. 517:121-124
Two-dimensional photonic crystals are promising structures for photonic applications. Here, we show that the optical properties of two-dimensional photonic crystal membranes fabricated from silicon-on-insulator substrates can be probed at room temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::914fc0a2fe9251f28e15b48f27cd8bb0
https://doi.org/10.1016/j.tsf.2008.08.146
https://doi.org/10.1016/j.tsf.2008.08.146
Autor:
Cécile Berne, Takeshi Akatsu, Muriel Martinez, Jean-Michel Hartmann, Christophe Figuet, Yves-Matthieu Le Vaillant, Chrystel Deguet, Cecile Aulnette, Fabrice Lallement, Lionel Portigliatti, Frederic Allibert, Nicolas Boudou, Alexandra Abbadie, Fanny Triolet, Y. Bogumilowicz, Cyrille Colnat, Phuong Nguyen, Cécile Delattre, Kira Tsyganenko, Denis Rouchon
Publikováno v:
ECS Transactions. 3:107-117
Bi-axially highly-strained Silicon-On-Insulator (sSOI) substrates with a tensile stress up to 2.5 GPa have been obtained by Smart CutTM technology. Thin strained silicon (sSi) layers epitaxially grown on relaxed Si0.6Ge0.4 virtual substrates (VS) wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e7f02313f6da506b31ebafdda93bbd
https://doi.org/10.1149/1.2357060
https://doi.org/10.1149/1.2357060
Autor:
N. Kernevez, Frédéric Mazen, Laurent Clavelier, Chrystel Deguet, Jean-Michel Hartmann, Denis Rouchon, Frederic Allibert, Fabrice Letertre, Takeshi Akatsu, L. Sanchez, Thomas Signamarcheix, C. Richtarch, Virginie Loup, Carlos Mazure, Alice Boussagol, Yves Campidelli
Publikováno v:
Materials Science in Semiconductor Processing. 9:444-448
Germanium-on-insulator (GeOI), which combines high mobility of charge carriers with the advantages of an SOI structure, is an attractive integration platform for the future IC technology. Also, due to its low lattice mismatch with GaAs, III–V compo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05ea5c0bbd701839ba465c060424786b
https://doi.org/10.1016/j.mssp.2006.08.077
https://doi.org/10.1016/j.mssp.2006.08.077
Autor:
Fabrice Letertre, Benedite Osternaud, Nicolas Daval, Ian Cayrefourcq, C. Lagahe, B. Bataillou, C. Aulentte, C. Morales, N. Sousbie, S. Sartori, Carlos Mazure, Franck Fournel, Beatrice Biasse, E. Jalaguier, B. Aspar, J.F. Michaud, C. Richtarch, Bruno Ghyselen, A.M. Cartier, Takeshi Akatsu, S. Pocas, Olivier Rayssac, A. Beaumont, A. Soubie, Hubert Moriceau
Publikováno v:
Journal of Electronic Materials. 32:829-835
The SmartCut process was first developed to obtain silicon-on-insulator (SOI) materials. Now an industrial process, the main Unibond SOI-structure trends are reported in this paper. Many material combinations can be achieved by this process, because
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4b45aa41353115a35fb42b8df91ba24
https://doi.org/10.1007/s11664-003-0196-x
https://doi.org/10.1007/s11664-003-0196-x
Publikováno v:
Journal of Applied Physics. 90:3856-3862
Large-area wafer bonding of different III–V compound semiconductors in an ultrahigh vacuum background is demonstrated. The bonding procedure, the microstructure, and the mechanical strength of the bonded GaAs/InP and GaAs/GaP interfaces were studie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1547f97541206f1bf24149e821e386cc
https://doi.org/10.1063/1.1403684
https://doi.org/10.1063/1.1403684
Autor:
Manfred Rühle, Takeshi Akatsu, Naoe Hosoda, Tadatomo Suga, Christina Scheu, Thomas Gemming, Thomas Wagner
Publikováno v:
Applied Surface Science. 165:159-165
The morphology and microstructure of Ar+-ion bombarded (0001) α-Al2O3 surfaces were studied by employing analytical electron microscopy (AEM) and high-resolution transmission electron microscopy (HRTEM). Surface bombardment with 1 keV Ar+-ions resul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a220c6163ea2130e77787e04d0666a9
https://doi.org/10.1016/s0169-4332(00)00376-7
https://doi.org/10.1016/s0169-4332(00)00376-7
Publikováno v:
Journal of Applied Physics. 86:7146-7150
A method of large-area wafer bonding of GaAs is proposed. The bonding procedure was carried out in an ultrahigh vacuum. The wafer surfaces were cleaned at 400 and 500 °C by application of atomic hydrogen produced by thermal cracking. The wafers were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a2b0e080151bb8aa62dec4a2d00b08a
https://doi.org/10.1063/1.371804
https://doi.org/10.1063/1.371804
Autor:
Fabrice Letertre, Bart Onsia, David P. Brunco, Eddy Simoen, Karl Opsomer, V. Terzieva, G. Winderickx, Koen Martens, J. Van Steenbergen, M. Meuris, A. M. Pourghaderi, Matty Caymax, R. Bonzom, Paul Zimmerman, S. Sioncke, Thierry Conard, G. Raskin, T. Billon, Paul Mertens, Annelies Delabie, A. Satta, S. Van Elshocht, Trudo Clarysse, E. Van Moorhem, Marc Heyns, Roger Loo, David Hellin, Frederik Leys, J. Snow, Wilfried Vandervorst, Takeshi Akatsu, Tom Janssens, B. De Jaeger, Michel Houssa, Ben Kaczer
Publikováno v:
Advanced Microelectronics ISBN: 9783540714903
A key challenge in the engineering of Ge MOSFETs is to develop a proper Ge surface passivation technique prior to high-κ dielectric deposition to obtain low interface state density and high carrier mobility. A review on some possible treatments to p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b5378bf6095b5bedb6a11b08a47c8d1
https://doi.org/10.1007/978-3-540-71491-0_15
https://doi.org/10.1007/978-3-540-71491-0_15
Autor:
Takeshi Akatsu, Fabrice Letertre, Ian Cayrefourcq, B. Ghyselen, George K. Celler, Carlos Mazure, Mark Kennard
Publikováno v:
Advanced Microelectronics ISBN: 9783540714903
Silicon-on-Insulator (SOI) is today the substrate of choice for several applications. In order to boost further circuit performance, new solutions are being explored. In particular, increasing the charge carrier mobility has been identified as a requ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2fb5e547710bb9ca818b8113cac84d
https://doi.org/10.1007/978-3-540-71491-0_3
https://doi.org/10.1007/978-3-540-71491-0_3
Autor:
Carl Quaeyhaegens, Walter De Baets, Chrystel Deguet, Takeshi Akatsu, Fabrice Letertre, Igor Romandic, Marc De Jonghe, Antoon Theuwis, B. Depuydt
Publisher Summary This chapter discusses germanium (Ge) fabrication techniques. Other than the manufacturing of Czochralski Ge substrates, this chapter also discusses the possible approaches for making germanium-on-insulator (GOI) materials. The chap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69f1121898635d7e9e37fb84975e8b5
https://doi.org/10.1016/b978-008044953-1/50005-3
https://doi.org/10.1016/b978-008044953-1/50005-3